Inverse participation ratio and localization in topological insulator phase transitions
arXiv:1610.03696 · doi:10.1088/1742-5468/2015/06/P06029
Abstract
Fluctuations of Hamiltonian eigenfunctions, measured by the inverse participation ratio (IPR), turn out to characterize topological-band insulator transitions occurring in 2D Dirac materials like silicene, which is isostructural with graphene but with a strong spin-orbit interaction. Using monotonic properties of the IPR, as a function of a perpendicular electric field (which provides a tunable band gap), we define topological-like quantum numbers that take different values in the topological-insulator and band-insulator phases.
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- Multifractality and excited-state quantum phase transition in ferromagnetic spin- Bose-Einstein condensates
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- The Photochemical Birth of the Hydrated Electron in Liquid Water
- Equilibration and Typicality in Quantum Processes
- Probing Electron Localization and Delocalization in the Selective Long-Range Tight-Binding Model
- Localization and entanglement characterization of edge states in HgTe quantum wells in a finite strip geometry