Topological Corner States in Graphene by Bulk and Edge Engineering
arXiv:2202.02781 · doi:10.1103/PhysRevB.106.L201407
Abstract
Two-dimensional higher-order topology is usually studied in (nearly) particle-hole symmetric models, so that an edge gap can be opened within the bulk one. But more often deviates the edge anticrossing even into the bulk, where corner states are difficult to pinpoint. We address this problem in a graphene-based topological insulator with spin-orbit coupling and in-plane magnetization both originating from substrates through a Slater-Koster multi-orbital model. The gapless helical edge modes cross inside the bulk, where is also located the magnetization-induced edge gap. After demonstrating its second-order nontriviality in bulk topology by a series of evidence, we show that a difference in bulk-edge onsite energy can adiabatically tune the position of the crossing/anticrossing of the edge modes to be inside the bulk gap. This can help unambiguously identify two pairs of topological corner states with nonvanishing energy degeneracy for a rhombic flake. We further find that the obtuse-angle pair is more stable than the acute-angle one. These results not only suggest an accessible way to "find" topological corner states, but also provide a higher-order topological version of "bulk-boundary correspondence".
References in corpus (23)
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- Topological Insulators with Inversion Symmetry
- Topological Acoustics
- Intrinsic and Rashba Spin-orbit Interactions in Graphene Sheets
- Topological Defects and Gapless Modes in Insulators and Superconductors
- Quantum Anomalous Hall Effect in Graphene from Rashba and Exchange Effects
- Quantum Anomalous Hall Effect in Graphene Proximity Coupled to an Antiferromagnetic Insulator
- A General Theorem Relating the Bulk Topological Number to Edge States in Two-dimensional Insulators
- Liganded Xene as a Prototype of Two-Dimensional Stiefel-Whitney Insulators
- Topological and geometrical aspects of band theory
- Anomalous topological edge states in non-Hermitian piezophononic media
- Inverse participation ratio and localization in topological insulator phase transitions
- Second Order Topological Insulator State in Hexagonal Lattices and its Abundant Material Candidates
- Topological phases in gated bilayer graphene: Effects of Rashba spin-orbit coupling and exchange field
- Second-order topological corner states with ultracold atoms carrying orbital angular momentum in optical lattices
- Higher-order topology in monolayer graphene
- In-Plane Magnetization Induced Quantum Anomalous Hall Effect in Atomic Crystals of Group-V Elements
- Inverse participation ratios in the XXZ spin chain
- Edge states in a ferromagnetic honeycomb lattice with armchair boundaries
- Hinge states in a system of coupled Rashba layers
- From Atomic Semimetal to Topological Nontrivial Insulator
- Inverse Participation Ratios in the XX spin chain
- Topological phase transition from trigonal warping in van der Waals multilayers
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- Altermagnetism Induced Topological Phase Transitions in Kane-Mele Model
- Bulk-boundary-transport correspondence of the second-order topological insulators
- Ferroelectric polarization controlled orbital Hall conductivity in a higher-order topological insulator: \textit{d1T}-phase monolayer MoS