Realization of Quantum Anomalous Hall Effect in Graphene from \textit{n}-\textit{p} Codoping Induced Stable Atomic-Adsorption
arXiv:1704.02085 · doi:10.1103/PhysRevB.95.121410
Abstract
Using first-principles calculation methods, we study the possibility of realizing quantum anomalous Hall effect in graphene from stable 3\textit{d}-atomic adsorption via charge-compensated \textit{n}-\textit{p} codoping scheme. As concrete examples, we show that long-range ferromagnetism can be established by codoping 3\textit{d} transition metal and boron atoms, but only the Ni codopants can open up a global bulk gap to harbour the quantum anomalous Hall effect. Our estimated ferromagnetic Curie transition temperature can reach over 10 Kelvin for various codoping concentrations.
References in corpus (23)
- The electronic properties of graphene
- Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
- Quantized Anomalous Hall Effect in Magnetic Topological Insulators
- Intrinsic and Rashba Spin-orbit Interactions in Graphene Sheets
- First Principles Calculation of Anomalous Hall Conductivity in Ferromagnetic bcc Fe
- Spin-orbit gap of graphene: First-principles calculations
- High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator
- Quantum Anomalous Hall Effect in Graphene from Rashba and Exchange Effects
- Trajectory of Anomalous Hall Effect toward the Quantized State in a Ferromagnetic Topological Insulator
- Scale-Invariant Dissipationless Chiral Transport in Magnetic Topological Insulators beyond the Two-Dimensional Limit
- Proximity-induced ferromagnetism in graphene revealed by anomalous Hall effect
- Topological Phases in Two-Dimensional Materials: A Brief Review
- Quantum anomalous Hall effect and related topological electronic states
- Quantum Anomalous Hall Effect in Graphene Proximity Coupled to an Antiferromagnetic Insulator
- Magnetic modulation doping in topological insulators toward higher-temperature quantum anomalous Hall effect
- Precise quantization of anomalous Hall effect near zero magnetic field
- Metal-to-Insulator Switching in Quantum Anomalous Hall States
- Adatoms and clusters of 3d transition metals on graphene: Electronic and magnetic configurations
- Carrier-induced ferromagnetism in n-type ZnMnAlO and ZnCoAlO thin films at room temperature
- Tailoring Graphene with Metals on Top
- High-Temperature Quantum Anomalous Hall Effect in n-p Codoped Topological Insulators
- Optimization of Mn Doping in Group-IV-based Dilute Magnetic Semiconductors by Electronic Co-dopants
- Gate-Tunable Exchange Coupling Between Cobalt Clusters on Graphene
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- Large Rashba Spin-Orbit Coupling and High-Temperature Quantum Anomalous Hall Effect in Re-Intercalated Graphene/CrI Heterostructure
- Finite-Size Effects in the Dynamic Conductivity and Faraday Effect of Quantum Anomalous Hall Insulators