Precise quantization of anomalous Hall effect near zero magnetic field

Abstract

We report a nearly ideal quantum anomalous Hall effect in a three-dimensional topological insulator thin film with ferromagnetic doping. Near zero applied magnetic field we measure exact quantization in Hall resistance to within a part per 10,000 and longitudinal resistivity under 1 ohm per square, with chiral edge transport explicitly confirmed by non-local measurements. Deviations from this behavior are found to be caused by thermally-activated carriers, which can be eliminated by taking advantage of an unexpected magnetocaloric effect.

arXiv comment5 pages, 4 figures, with 9 pages of supplementary information

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Cited by in corpus (163)

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• Imaging Dirac-Mass Disorder from Magnetic Dopant-Atoms in the Ferromagnetic Topological Insulator Cr${}_x$(Bi${}_{0.1}$Sb${}_{0.9}$)${}_{2-x}$Te${}_3$
• Chiral topological superconductor and half-integer conductance plateau from quantum anomalous Hall plateau transition
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• Long Range Intrinsic Ferromagnetism in Two Dimensional Materials and Dissipationless Future Technologies
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• Topological and geometrical aspects of band theory
• Electronic states and magnetic response of MnBi2Te4 by scanning tunneling microscopy and spectroscopy
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