Quantum Hall Edge States in Topological Insulator Nanoribbons
arXiv:1603.07594 · doi:10.1103/PhysRevB.94.121409
Abstract
We present a microscopic theory of the chiral one-dimensional electron gas system localized on the sidewalls of magnetically-doped BiSe-family topological insulator nanoribbons in the quantum anomalous Hall effect (QAHE) regime. Our theory is based on a simple continuum model of sidewall states whose parameters are extracted from detailed ribbon and film geometry tight-binding model calculations. In contrast to the familiar case of the quantum Hall effect in semiconductor quantum wells, the number of microscopic chiral channels depends simply and systematically on the ribbon thickness and on the position of the Fermi level within the surface state gap. We use our theory to interpret recent transport experiments that exhibit non-zero longitudinal resistance in samples with accurately quantized Hall conductances.
5 pages, 4 figures
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Cited by in corpus (12)
- 3D quantum Hall effect of Fermi arcs in topological semimetals
- Quantum Transport in Topological Semimetals under Magnetic Fields
- Systematics of electronic and magnetic properties in the transition metal doped SbTe quantum anomalous Hall platform
- Current-driven instability of quantum anomalous Hall effect in ferromagnetic topological insulators
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- Realization of the Chern insulator and Axion insulator phases in antiferromagnetic -- heterostructures
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