Carrier free long-range magnetism in Mo doped one quintuple layer Bi2Te3 and Sb2Te3

Abstract

One of the keys to the realization of Quantum Anomalous Hall effect (QAHE) is long range ferromagnetism, which is only experimentally realized in Cr or V doped (Bi,Sb)2Te3 system. Both elements are 3d transition metals and 4d transition metals are found to be ineffective to produce long range ferromagnetism in Bi2Se3. Still, whether long range ferromagnetism can be realized by magnetic doping of 4d elements is an open question. Based on density functional theory calculations, we predict that long range ferromagnetism can be realized in Mo doped Bi2Te3 and Sb2Te3, which are semiconducting. The coupling strength is comparable with that of Cr doped Bi2Te3 and Sb2Te3. Therefore, Mo doped Bi2Te3 and Sb2Te3 or their alloys can be new systems to realize diluted magnetic semiconductors and QAHE.

arXiv comment6 figures, 1 table

References in corpus (22)

• Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
• Quantized Anomalous Hall Effect in Magnetic Topological Insulators
• High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator
• Magnetic modulation doping in topological insulators toward higher-temperature quantum anomalous Hall effect
• Precise quantization of anomalous Hall effect near zero magnetic field
• Carrier-independent ferromagnetism and giant anomalous Hall effect in magnetic topological insulator
• Electrically controllable surface magnetism on the surface of topological insulator
• Tailoring Magnetic Doping in the Topological Insulator Bi2Se3
• Visualization of superparamagnetic dynamics in magnetic topological insulators
• Stability, Electronic and Magnetic properties of magnetically doped topological insulators Bi2Se3, Bi2Te3 and Sb2Te3
• Chemical potential dependent gap-opening at the Dirac surface states of Bi2Se3 induced by aggregated substitutional Cr atoms
• High-Temperature Quantum Anomalous Hall Effect in n-p Codoped Topological Insulators
• Proximity Driven Enhanced Magnetic Order at Ferromagnetic Insulator / Magnetic Topological Insulator Interface
• Direct evidence of ferromagnetism in a quantum anomalous Hall system
• Exchange interaction and its tuning in magnetic binary chalcogenides
• Quantum Anomalous Hall Effect in Magnetic Insulator Heterostructure
• Systematics of electronic and magnetic properties in the transition metal doped Sb${}_2$Te${}_3$ quantum anomalous Hall platform
• Short-range magnetic order and temperature-dependent properties of cupric oxide
• Microscopic effects of Dy-doping in the topological insulator Bi2Te3
• Electronic Fingerprints of Cr and V Dopants in Topological Insulator Sb2Te3
• Realization of Stable Ferromagnetic Order in Topological Insulator: Codoping Enhanced Magnetism in 4f Transition Metal Doped Bi2Se3
• Ab initio investigation of impurity-induced in-gap states in Bi${}_2$Te${}_3$ and Bi${}_2$Se${}_3$