Electronic Fingerprints of Cr and V Dopants in Topological Insulator Sb2Te3

Abstract

By combining scanning tunneling microscopy/spectroscopy and first-principles calculations, we systematically study the local electronic states of magnetic dopants V and Cr in the topological insulator (TI) Sb2Te3. Spectroscopic imaging shows diverse local defect states between Cr and V, which agree with our first-principle calculations. The unique spectroscopic features of V and Cr dopants provide electronic fingerprints for the co-doped magnetic TI samples with the enhanced quantum anomalous Hall effect. Our results also facilitate the exploration of the underlying mechanism of the enhanced quantum anomalous Hall temperature in Cr/V co-doped TIs.

arXiv comment21 pages, 7 figures

References in corpus (21)

• Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
• Topological Field Theory of Time-Reversal Invariant Insulators
• Quantized Anomalous Hall Effect in Magnetic Topological Insulators
• Ferromagnetism in semiconductors and oxides: prospects from a ten years' perspective
• High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator
• Trajectory of Anomalous Hall Effect toward the Quantized State in a Ferromagnetic Topological Insulator
• Scale-Invariant Dissipationless Chiral Transport in Magnetic Topological Insulators beyond the Two-Dimensional Limit
• The development of ferromagnetism in the doped topological insulator Bi2-xMnxTe3
• Precise quantization of anomalous Hall effect near zero magnetic field
• Imaging Dirac-Mass Disorder from Magnetic Dopant-Atoms in the Ferromagnetic Topological Insulator Cr${}_x$(Bi${}_{0.1}$Sb${}_{0.9}$)${}_{2-x}$Te${}_3$
• Fermi Level Tuning of Epitaxial Sb2Te3 Thin Films on Graphene by Regulating Intrinsic Defects and Substrate Transfer Doping
• Chemical potential dependent gap-opening at the Dirac surface states of Bi2Se3 induced by aggregated substitutional Cr atoms
• Low temperature ferromagnetic properties of the diluted magnetic semiconductor Sb2-xCrxTe3
• Onset of the Meissner effect at 65 K in FeSe thin film grown on Nb doped SrTiO3 substrate
• Experimental Verification of Van Vleck Nature of Long-Range Ferromagnetic Order in Vanadium-Doped Three-Dimensional Topological Insulator Sb${}_2$Te${}_3$
• Direct evidence of ferromagnetism in a quantum anomalous Hall system
• Dual nature of magnetic dopants and competing trends in topological insulators
• Systematics of electronic and magnetic properties in the transition metal doped Sb${}_2$Te${}_3$ quantum anomalous Hall platform
• Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)2Te3 film
• Mass acquisition of Dirac fermions in Cr-doped topological insulator Sb2Te3 films
• Scattering properties of the three-dimensional topological insulator Sb2Te3: Coexistence of topologically trivial and non-trivial surface states with opposite spin-momentum helicity

Cited by in corpus (8)

• Colloquium: Quantum anomalous Hall effect
• Ubiquitous impact of localised impurity states on the exchange coupling mechanism in magnetic topological insulators
• Spontaneous ferromagnetism and finite surface energy gap in the topological insulator Bi${}_2$Se${}_3$ from surface Bi$_\rm{Se}$ antisite defects
• From classical to quantum regime of topological surface states via defect engineering
• Phonon and defect mediated quantum anomalous Hall insulator to metal transition in magnetically doped topological insulators
• Introducing antiferromagnetic ordering on the surface states of Bi2Se3 topological insulator by Europium doping
• Magnetic interactions of 4$f$ electrons in the topological insulator chalcogenide Bi${}_2$Se${}_3$
• Carrier free long-range magnetism in Mo doped one quintuple layer Bi2Te3 and Sb2Te3