Mass acquisition of Dirac fermions in Cr-doped topological insulator Sb2Te3 films
arXiv:1305.3766 · doi:10.1103/PhysRevB.92.195418
Abstract
We introduce time-reversal-symmetry breaking by doping Cr atoms into the topmost quintuple layer or into the bulk of Sb2Te3 thin films. We find that even at a high Cr-doping level the Landau level spectrum keeps a good quality, enabling the first demonstration of deviation of the zero-mode Landau level, induced by the acquisition of a mass term in the surface states in the presence of surface or bulk magnetic doping. The magnitude of the mass term in the surface states increases with increasing Cr-doping level. Our observation suggests Cr-doped Sb2Te3 is a promising candidate for the realization of the proposed novel magnetoelectric effects.
18 pages, 4 figures
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- Stepwise quantized surface states and delayed Landau level hybridization in Co cluster-decorated BiSbTeSe2 topological insulator devices
- Magnetic and defect probes of the SmB surface state
- Impurity states in the magnetic topological insulator V:(Bi,Sb)Te
- Severe Dirac Mass Gap Suppression in Sb_2Te_3-based Quantum Anomalous Hall Materials
- Impurity scattering on the surface of topological insulator thin films
- Electronic Fingerprints of Cr and V Dopants in Topological Insulator Sb2Te3
- Long-time relaxation dynamics of a spin coupled to a Chern insulator
- Spin Berry curvature of the Haldane model
- Phonon and defect mediated quantum anomalous Hall insulator to metal transition in magnetically doped topological insulators
- Prediction of at topological excitonic insulator with parity anomaly