Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)2Te3 film
arXiv:1609.02679 · doi:10.1038/srep32732
Abstract
The experimental realization of the quantum anomalous Hall (QAH) effect in magnetically-doped (Bi, Sb)2Te3 films stands out as a landmark of modern condensed matter physics. However, ultra-low temperatures down to few tens of mK are needed to reach the quantization of Hall resistance, which is two orders of magnitude lower than the ferromagnetic phase transition temperature of the films. Here, we systematically study the band structure of V-doped (Bi, Sb)2Te3 thin films by angle-resolved photoemission spectroscopy (ARPES) and show unambiguously that the bulk valence band (BVB) maximum lies higher in energy than the surface state Dirac point. Our results demonstrate clear evidence that localization of BVB carriers plays an active role and can account for the temperature discrepancy.
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- Confinement-Induced Chiral Edge Channel Interaction in Quantum Anomalous Hall Insulators
- Bulk dissipation in the quantum anomalous Hall effect
- Intrinsic magnetic topological insulators of the MnBiTe family
- Magnetization relaxation and search for the magnetic gap in bulk-insulating V-doped (Bi, Sb)Te
- Three-Dimensional Quantum Anomalous Hall Effect in Magnetic Topological Insulator Trilayers of Hundred-Nanometer Thickness
- Environmental Doping-Induced Degradation of the Quantum Anomalous Hall Insulators
- Phonon and defect mediated quantum anomalous Hall insulator to metal transition in magnetically doped topological insulators
- Magneto-optical effects of an artificially-layered ferromagnetic topological insulator with T of 160 K
- Interlayer Coupling-Induced Quantum Phase Transition in Quantum Anomalous Hall Multilayers