Quantum Anomalous Hall Effect in Magnetic Insulator Heterostructure

Abstract

Based on ab initio calculations, we predict that a monolayer of Cr-doped (Bi,Sb)2Te3 and GdI2 heterostructure is a quantum anomalous Hall insulator with a non-trivial band gap up to 38 meV. The principle behind our prediction is that the band inversion between two topologically trivial ferromagnetic insulators can result in a non-zero Chern number, which offers a better way to realize the quantum anomalous Hall state without random magnetic doping. In addition, a simple effective model is presented to describe the basic mechanism of spin polarized band inversion in this system. Moreover, we predict that 3D quantum anomalous Hall insulator could be realized in (Bi2/3Cr1/3)2Te3/GdI2 superlattice.

References in corpus (8)

• Topological Field Theory of Time-Reversal Invariant Insulators
• Quantized Anomalous Hall Effect in Magnetic Topological Insulators
• Quantum Spin Hall Effect in Inverted Type II Semiconductors
• Quantum Anomalous Hall Effect in Hg${}_{1-y}$Mn${}_y$Te Quantum Wells
• Trajectory of Anomalous Hall Effect toward the Quantized State in a Ferromagnetic Topological Insulator
• Scale-Invariant Dissipationless Chiral Transport in Magnetic Topological Insulators beyond the Two-Dimensional Limit
• A General Theorem Relating the Bulk Topological Number to Edge States in Two-dimensional Insulators
• Chern insulator at a magnetic rocksalt interface

Cited by in corpus (3)

• NiCl3 Monolayer: Dirac Spin-Gapless Semiconductor and Chern Insulator
• Quantum anomalous Hall effect in ferromagnetic transition metal halides
• Conductance fluctuations and disorder induced $\nu =0$ quantum Hall plateau in topological insulator nanowires