Hinge Spin Polarization in Magnetic Topological Insulators Revealed by Resistance Switch

Abstract

We report on the possibility to detect hinge spin polarization in magnetic topological insulators by resistance measurements. By implementing a three-dimensional model of magnetic topological insulators into a multi-terminal device with ferromagnetic contacts near the top surface, local spin features of the chiral edge modes are unveiled. We find local spin polarization at the hinges that inverts sign between top and bottom surfaces. At the opposite edge, the topological state with inverted spin polarization propagates in the reverse direction. Large resistance switch between forward and backward propagating states is obtained, driven by the matching between the spin polarized hinges and the ferromagnetic contacts. This feature is general to the ferromagnetic, antiferromagnetic and canted-antiferromagnetic phases, and enables the design of spin-sensitive devices, with the possibility of reversing the hinge spin polarization of the currents.

arXiv commentMain: 6 pages, 4 figures. Supplemental Material: 3 pages, 5 figures

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• Sample-dependent Dirac point gap in MnBi${}_2$Te${}_4$ and its response to the applied surface charge: a combined photoemission and ab initio study
• Topological magnetic materials of the (MnSb${}_2$Te${}_4$)$\cdot$(Sb${}_2$Te${}_3$)${}_n$ van der Waals compounds family
• Topological classification and diagnosis in magnetically ordered electronic materials
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• Intrinsic magnetic topological insulators of the MnBi${}_2$Te${}_4$ family
• Topological spin texture of chiral edge states in photonic two-dimensional quantum walks
• Voltage-Controlled Skyrmionic Interconnect with Multiple Magnetic Information Carriers
• Phase transitions in intrinsic magnetic topological insulator with high-frequency pumping
• Giant Spin Transport Anisotropy in Magnetic Topological Insulators