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- Institució Catalana de Recerca i Estudis AvançatsES111 papers
- Universitat Autònoma de BarcelonaES57 papers
- Centre National de la Recherche ScientifiqueFR23 papers
- Institut de Ciència de Materials de BarcelonaES23 papers
- Universitat de BarcelonaES17 papers
- Donostia International Physics CenterES15 papers
- Institut de Nanociència i Nanotecnologia de la Universitat de Barcelona14 papers
- Technical University of DenmarkDK14 papers
- CIC nanoGUNEES12 papers
- Material Physics CenterES12 papers
- Consejo Nacional de Investigaciones Científicas y TécnicasAR11 papers
- Université Grenoble AlpesFR10 papers
212 papers
Electrical tunability of terahertz nonlinearity in graphene
Sergey Kovalev, Hassan A. Hafez, Klaas-Jan Tielrooij +15
Graphene is conceivably the most nonlinear optoelectronic material. Its nonlinear optical coefficients in the terahertz (THz) frequency range surpass those of other materials by ma…
Strain-Mediated Lattice Reconstruction Enhances Ferromagnetism in Cr2Ge2Te6/WTe2 van der Waals Heterobilayers
Franz Herling, Mireia Torres-Sala, Dorye L. Esteras +17
Van der Waals (vdW) heterostructures enable tailored electronic and magnetic phases by stacking atomically thin layers with pristine interfaces. Here, we investigate fully 2D Cr2Ge…
Hanle lineshapes and spin-rotation signatures from in-plane anisotropic spin relaxation in heterogeneous spin devices
Josef Světlík, Juan F. Sierra, Lorenzo Camosi +5
Spin precession experiments in lateral spin devices are a powerful tool for probing the spin transport properties of materials. These experiments can be quantitatively described us…
Enhanced Terahertz Photoresponse via Acoustic Plasmon Cavity Resonances in Scalable Graphene
Domenico De Fazio, Sebastián Castilla, Karuppasamy P. Soundarapandian +11
Precise control and nanoscale confinement of terahertz (THz) fields are essential requirements for emerging applications in photonics, quantum technologies, wireless communications…
Atomic-Scale Origins of Oxidation Resistance in Amorphous Boron Nitride
Onurcan Kaya, Qiushi Deng, Thomas Souvignet +4
Amorphous boron nitride (\textrm{}-BN) is a promising ultrathin barrier for nanoelectronics, yet the atomistic mechanisms governing its chemical stability remain poorly understo…
Semiconductor Meta-Graphene and Valleytronics
Praveen Pai, Aron W. Cummings, Alexander Cerjan +3
Nano-patterned semiconductor interfaces offer a versatile platform for creating quantum metamaterials and exploring novel electronic phenomena. In this study, we illustrate this co…