Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs

Abstract

For the growth of emerging graphene field-effect transistor (GFET) technologies, a thorough characterization of on-wafer variability is required. Here, we report for the first time a physics-based compact model, which precisely describes the drain current (ID) fluctuations of monolayer GFETs. Physical mechanisms known to generate 1/f noise in transistors, such as carrier number and Coulomb scattering mobility fluctuations, are also revealed to cause ID variance. Such effects are considered in the model by being activated locally in the channel and the integration of their contributions from source to drain results in total variance. The proposed model is experimentally validated from a statistical population of three different-sized solution-gated (SG) GFETs from strong p- to strong n-type bias conditions. A series resistance ID variance model is also derived mainly contributing at high carrier densities.

References in corpus (9)

• Graphene field effect transistors as room-temperature Terahertz detectors
• Carrier scattering, mobilities and electrostatic potential in mono-, bi- and tri-layer graphenes
• Mobility and Saturation Velocity in Graphene on SiO2
• Variability Effects in Graphene: Challenges and Opportunities for Device Engineering and Applications
• Compact modeling technology for the simulation of integrated circuits based on graphene field-effect transistors
• Exploiting ambipolarity in graphene field-effect transistors for novel designs on high-frequency analog electronics
• An extraction method for mobility degradation and contact resistance of graphene transistors
• A Scalable Compact Model for the Static Drain Current of Graphene FETs
• Bias Dependent Variability of Low Frequency Noise in Single Layer Graphene FETs