An extraction method for mobility degradation and contact resistance of graphene transistors

Abstract

The intrinsic mobility degradation coefficient, contact resistance and the transconductance parameter of graphene field-effect transistors (GFETs) are extracted for different technologies by considering a novel transport model embracing mobility degradation effects within the charge channel control description. By considering the mobility degradation-based model, a straightforward extraction methodology, not provided before, is enabled by applying the concept of the well-known Y-function to the \textit{I-V} device characteristics. The method works regardless the gate device architecture. An accurate description of experimental data of fabricated devices is achieved with the underlying transport equation by using the extracted parameters. An evaluation of the channel resistance, enabled by the extracted parameters here, has been also provided.

References in corpus (4)

• Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric
• Mobility and Saturation Velocity in Graphene on SiO2
• Contact resistance extraction of graphene FET technologies based on individual device characterization
• Accuracy of Y-function methods for parameters extraction of two-dimensional FETs across different technologies

Cited by in corpus (4)

• A Scalable Compact Model for the Static Drain Current of Graphene FETs
• Characterization of the Intrinsic and Extrinsic Resistances of a Microwave Graphene FET Under Zero Transconductance Conditions
• Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs
• A Taylor Series Approximation Model for Characterizing the Output Resistance of a GFET