A Taylor Series Approximation Model for Characterizing the Output Resistance of a GFET

Abstract

The mobility-degradation-based model for the drain-to-source or output resistance of a graphene field-effect-transistor is linearized here using a Taylor series approximation. This simplification is shown to be valid from magnitudes of the gate voltage not significantly higher than the Dirac voltage, and it enables the analytical determination of the transconductance parameter, the voltage related to residual charges, and a bias-independent series resistance of the GFET. Furthermore, a continuous representation of the device's static response is achieved when substituting the extracted parameters into the model, regardless the transfer characteristic symmetry with respect to the Dirac voltage.

References in corpus (5)

• Chemical Doping and Electron-Hole Conduction Asymmetry in Graphene Devices
• Dependable contact related parameter extraction in graphene-metal junctions
• GFET Asymmetric Transfer Response Analysis through Access Region Resistances
• An extraction method for mobility degradation and contact resistance of graphene transistors
• A Scalable Compact Model for the Static Drain Current of Graphene FETs