GFET Asymmetric Transfer Response Analysis through Access Region Resistances

Abstract

Graphene-based devices are planned to augment the functionality of Si and III-V based technology in radio-frequency (RF) electronics. The expectations in designing graphene {field-effect} transistors (GFETs) with enhanced RF performance have attracted significant experimental efforts, mainly concentrated on achieving high mobility samples. However, little attention has been paid, so far, to the role of the access regions in these devices. \mbox{Here, we analyse} in detail, via numerical simulations, how the GFET transfer response is severely impacted by these regions, showing that they play a significant role in the asymmetric saturated behaviour commonly observed in GFETs. We also investigate how the modulation of the access region conductivity (i.e., by the influence of a back gate) and the presence of imperfections in the graphene layer (e.g., charge puddles) affects the transfer response. The analysis is extended to assess the application of GFETs for RF applications, by~evaluating their cut-off frequency.

12 pages, 8 figures

References in corpus (4)

• The electronic properties of graphene
• Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics
• Micrometer-scale ballistic transport in encapsulated graphene at room temperature
• Short channel effects in graphene-based field effect transistors targeting radio-frequency applications

Cited by in corpus (3)

• A Graphene Field-Effect Transistor Based Analogue Phase Shifter for High-Frequency Applications
• Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors
• Characterization of the Intrinsic and Extrinsic Resistances of a Microwave Graphene FET Under Zero Transconductance Conditions