GFET Asymmetric Transfer Response Analysis through Access Region Resistances

Abstract

Graphene-based devices are planned to augment the functionality of Si and III-V based technology in radio-frequency (RF) electronics. The expectations in designing graphene {field-effect} transistors (GFETs) with enhanced RF performance have attracted significant experimental efforts, mainly concentrated on achieving high mobility samples. However, little attention has been paid, so far, to the role of the access regions in these devices. \mbox{Here, we analyse} in detail, via numerical simulations, how the GFET transfer response is severely impacted by these regions, showing that they play a significant role in the asymmetric saturated behaviour commonly observed in GFETs. We also investigate how the modulation of the access region conductivity (i.e., by the influence of a back gate) and the presence of imperfections in the graphene layer (e.g., charge puddles) affects the transfer response. The analysis is extended to assess the application of GFETs for RF applications, by~evaluating their cut-off frequency.

arXiv comment12 pages, 8 figures

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Cited by in corpus (6)

• A Graphene Field-Effect Transistor Based Analogue Phase Shifter for High-Frequency Applications
• Temperature and gate effects on contact resistance and mobility in graphene transistors by TLM and Y-function methods
• Unveiling the impact of the bias-dependent charge neutrality point on graphene-based multi-transistor applications
• Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors
• Characterization of the Intrinsic and Extrinsic Resistances of a Microwave Graphene FET Under Zero Transconductance Conditions
• A Taylor Series Approximation Model for Characterizing the Output Resistance of a GFET