144 citations · 478 across the 12 of their papers we have counts for
12 papers
Exploiting ambipolarity in graphene field-effect transistors for novel designs on high-frequency analog electronics
Francisco Pasadas, Alberto Medina-Rull, Francisco G. Ruiz +8
Exploiting ambipolar electrical conductivity based on graphene field-effect transistors has raised enormous interest for high-frequency (HF) analog electronics. Controlling the dev…
Graphene on Silicon Hybrid Field-Effect Transistors
Mykola Fomin, Francisco Pasadas, Enrique Marin +9
The combination of graphene with silicon in hybrid devices has attracted attention extensively over the last decade. Most of such devices were proposed for photonics and radiofrequ…
Compact Modeling of pH-Sensitive FETs Based on Two-Dimensional Semiconductors
Tarek El Grour, Francisco Pasadas, Alberto Medina-Rull +7
We present a physics-based circuit-compatible model for pH-sensitive field-effect transistors based on two-dimensional (2D) materials. The electrostatics along the electrolyte-gate…
Unveiling the impact of the bias-dependent charge neutrality point on graphene-based multi-transistor applications
Francisco Pasadas, Alberto Medina-Rull, Pedro Carlos Feijoo +6
The Dirac voltage of a graphene field-effect transistor (GFET) stands for the gate bias that sets the charge neutrality condition in the channel, thus resulting in a minimum conduc…
Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors
A. Toral-Lopez, F. Pasadas, E. G. Marin +5
Two-dimensional materials (2DMs) are a promising alternative to complement and upgrade high-frequency electronics. However, in order to boost their adoption, the availability of nu…
A Graphene Field-Effect Transistor Based Analogue Phase Shifter for High-Frequency Applications
A. Medina-Rull, F. Pasadas, E. G. Marin +5
We present a graphene-based phase shifter for radio-frequency (RF) phase-array applications. The core of the designed phase-shifting system consists of a graphene field-effect tran…
Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances
Francisco Pasadas, Enrique G. Marin, Alejandro Toral-Lopez +5
We present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor based field effect transistors, which provides explicit expressions for the drain…
GFET Asymmetric Transfer Response Analysis through Access Region Resistances
A. Toral-Lopez, E. G. Marin, F. Pasadas +4
Graphene-based devices are planned to augment the functionality of Si and III-V based technology in radio-frequency (RF) electronics. The expectations in designing graphene {field-…
High Responsivity and Quantum Efficiency of Graphene / Silicon Photodiodes Achieved by Interdigitating Schottky and Gated Regions
Sarah Riazimehr, Satender Kataria, Jose-Maria González-Medina +6
Graphene / silicon (G/Si) heterostructures have been studied extensively in the past years for applications such as photodiodes, photodetectors and solar cells, with a growing focu…
Electrostatic Performance of InSb, GaSb, Si and Ge p-channel Nanowires
Celso Martinez-Blanque, Enrique G. Marin, Alejandro Toral +4
The electrostatic performance of p-type nanowires (NWs) made of InSb and GaSb, with special focus on their gate capacitance behavior, is analyzed and compared to that achieved by t…
High Photocurrent in Gated Graphene-Silicon Hybrid Photodiodes
Sarah Riazimehr, Satender Kataria, Rainer Bornemann +5
Graphene/silicon (G/Si) heterojunction based devices have been demonstrated as high responsivity photodetectors that are potentially compatible with semiconductor technology. Such…
Analytic model for the surface potential and drain current in negative capacitance field-effect transistors
David Jimenez, Enrique Miranda, Andres Godoy
In 2008, Salahuddin and Datta proposed that a ferroelectric material operating in the negative capacitance region could act as a step-up converter of the surface potential in a MOS…