35 citations · 101 across the 5 of their papers we have counts for
7 papers
Compact Modeling of pH-Sensitive FETs Based on Two-Dimensional Semiconductors
Tarek El Grour, Francisco Pasadas, Alberto Medina-Rull +7
We present a physics-based circuit-compatible model for pH-sensitive field-effect transistors based on two-dimensional (2D) materials. The electrostatics along the electrolyte-gate…
Unveiling the impact of the bias-dependent charge neutrality point on graphene-based multi-transistor applications
Francisco Pasadas, Alberto Medina-Rull, Pedro Carlos Feijoo +6
The Dirac voltage of a graphene field-effect transistor (GFET) stands for the gate bias that sets the charge neutrality condition in the channel, thus resulting in a minimum conduc…
Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors
A. Toral-Lopez, F. Pasadas, E. G. Marin +5
Two-dimensional materials (2DMs) are a promising alternative to complement and upgrade high-frequency electronics. However, in order to boost their adoption, the availability of nu…
A Graphene Field-Effect Transistor Based Analogue Phase Shifter for High-Frequency Applications
A. Medina-Rull, F. Pasadas, E. G. Marin +5
We present a graphene-based phase shifter for radio-frequency (RF) phase-array applications. The core of the designed phase-shifting system consists of a graphene field-effect tran…
Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances
Francisco Pasadas, Enrique G. Marin, Alejandro Toral-Lopez +5
We present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor based field effect transistors, which provides explicit expressions for the drain…
GFET Asymmetric Transfer Response Analysis through Access Region Resistances
A. Toral-Lopez, E. G. Marin, F. Pasadas +4
Graphene-based devices are planned to augment the functionality of Si and III-V based technology in radio-frequency (RF) electronics. The expectations in designing graphene {field-…