42 citations · 368 across the 22 of their papers we have counts for
22 papers
Numerical study of synaptic behavior in amorphous HfO2-based ferroelectric-like FETs generated by voltage-driven ion migration
Juan Cuesta-Lopez, Mohit D. Ganeriwala, Enrique G. Marin +4
The continuous effort in making artificial neural networks more alike to human brain calls for the hardware elements to implement biological synapse-like functionalities. The recen…
Understanding Memristive Behavior: An Atomistic Study of the Influence of Grain Boundaries on Surface and Out-of-Plane Diffusion of Metallic Atoms
Mohit D. Ganeriwala, Daniel Luque-Jarava, Francisco Pasadas +4
Atomic migration from metallic contacts, and subsequent filament formation, is recognised as a prevailing mechanism leading to resistive switching in memristors based on two-dimens…
Exploiting ambipolarity in graphene field-effect transistors for novel designs on high-frequency analog electronics
Francisco Pasadas, Alberto Medina-Rull, Francisco G. Ruiz +8
Exploiting ambipolar electrical conductivity based on graphene field-effect transistors has raised enormous interest for high-frequency (HF) analog electronics. Controlling the dev…
Characterization of the Intrinsic and Extrinsic Resistances of a Microwave Graphene FET Under Zero Transconductance Conditions
Xiomara Ribero-Figueroa, Anibal Pacheco-Sanchez, Aida Mansouri +7
Graphene field-effect transistors exhibit negligible transconductance under two scenarios: for any gate-to-source voltage when the drain-to-source voltage is set to zero, and for a…
Compact modeling technology for the simulation of integrated circuits based on graphene field-effect transistors
Francisco Pasadas, Pedro C. Feijoo, Nikolaos Mavredakis +3
In this study, we report the progress made towards the definition of a modular compact modeling technology for graphene field-effect transistors (GFET) that enables the electrical…
Graphene on Silicon Hybrid Field-Effect Transistors
Mykola Fomin, Francisco Pasadas, Enrique Marin +9
The combination of graphene with silicon in hybrid devices has attracted attention extensively over the last decade. Most of such devices were proposed for photonics and radiofrequ…
Compact Modeling of pH-Sensitive FETs Based on Two-Dimensional Semiconductors
Tarek El Grour, Francisco Pasadas, Alberto Medina-Rull +7
We present a physics-based circuit-compatible model for pH-sensitive field-effect transistors based on two-dimensional (2D) materials. The electrostatics along the electrolyte-gate…
Unveiling the impact of the bias-dependent charge neutrality point on graphene-based multi-transistor applications
Francisco Pasadas, Alberto Medina-Rull, Pedro Carlos Feijoo +6
The Dirac voltage of a graphene field-effect transistor (GFET) stands for the gate bias that sets the charge neutrality condition in the channel, thus resulting in a minimum conduc…
Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors
A. Toral-Lopez, F. Pasadas, E. G. Marin +5
Two-dimensional materials (2DMs) are a promising alternative to complement and upgrade high-frequency electronics. However, in order to boost their adoption, the availability of nu…
A Graphene Field-Effect Transistor Based Analogue Phase Shifter for High-Frequency Applications
A. Medina-Rull, F. Pasadas, E. G. Marin +5
We present a graphene-based phase shifter for radio-frequency (RF) phase-array applications. The core of the designed phase-shifting system consists of a graphene field-effect tran…
Sensitivity Analysis of a Graphene Field-Effect Transistors by means of Design of Experiments
Giovanni Spinelli, Patrizia Lamberti, Vincenzo Tucci +2
Graphene, due to its unique electronic structure favoring high carrier mobility, is considered a promising material for use in high-speed electronic devices in the post-silicon ele…
Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances
Francisco Pasadas, Enrique G. Marin, Alejandro Toral-Lopez +5
We present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor based field effect transistors, which provides explicit expressions for the drain…
GFET Asymmetric Transfer Response Analysis through Access Region Resistances
A. Toral-Lopez, E. G. Marin, F. Pasadas +4
Graphene-based devices are planned to augment the functionality of Si and III-V based technology in radio-frequency (RF) electronics. The expectations in designing graphene {field-…
Does carrier velocity saturation help to enhance fmax in graphene field-effect transistors?
Pedro Carlos Feijoo, Francisco Pasadas, Marlene Bonmann +10
It has been argued that current saturation in graphene field-effect transistors (GFETs) is needed to get the highest possible maximum oscillation frequency (fmax). This paper numer…
Non-quasi-static effects in graphene field-effect transistors under high-frequency operation
Francisco Pasadas, David Jiménez
We have investigated the non-quasi-static (NQS) effects in graphene field-effect transistors (GFETs), which are relevant for GFET operation at high frequencies as a result of signi…
Large-signal model of the Metal-Insulator-Graphene diode targeting RF applications
Francisco Pasadas, Mohamed Saeed, Ahmed Hamed +4
We present a circuit-design compatible large-signal compact model of metal-insulator-graphene (MIG) diodes for describing its dynamic response for the first time. The model essenti…
Radio frequency performance projection and stability trade-off of h-BN encapsulated graphene field-effect transistors
Pedro C. Feijoo, Francisco Pasadas, José M. Iglesias +3
Hexagonal boron nitride (h-BN) encapsulation significantly improves carrier transport in graphene. This work investigates the benefit of implementing the encapsulation technique in…
Modelling of field-effect transistors based on 2D materials targeting high-frequency applications
Francisco Pasadas
New technologies are necessary for the unprecedented expansion of connectivity and communications in the modern technological society. The specific needs of wireless communication…
Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor
Pedro C. Feijoo, Francisco Pasadas, José M. Iglesias +7
The quality of graphene in nanodevices has increased hugely thanks to the use of hexagonal boron nitride as a supporting layer. This paper studies to which extent hBN together with…
Small-signal model for 2D-material based field-effect transistors targeting radio-frequency applications: the importance of considering non-reciprocal capacitances
Francisco Pasadas, Wei Wei, Emiliano Pallecchi +2
A small-signal equivalent circuit of 2D-material based field-effect transistors is presented. Charge conservation and non-reciprocal capacitances have been assumed so the model can…
Large-Signal Model of Graphene Field-Effect Transistors -- Part II: Circuit Performance Benchmarking
Francisco Pasadas, David Jiménez
This paper presents a circuit performance benchmarking using the large-signal model of graphene field effect transistor reported in Part I of this two-part paper. To test the model…
Large-signal model of the bilayer graphene field-effect transistor targeting radio-frequency applications: theory versus experiment
Francisco Pasadas, David Jiménez
Bilayer graphene is a promising material for radio-frequency transistors because its energy gap might result in a better current saturation than the monolayer graphene. Because the…