42 citations · 368 across the 22 of their papers we have counts for
10 papers · 1 filter
Compact modeling technology for the simulation of integrated circuits based on graphene field-effect transistors
Francisco Pasadas, Pedro C. Feijoo, Nikolaos Mavredakis +3
In this study, we report the progress made towards the definition of a modular compact modeling technology for graphene field-effect transistors (GFET) that enables the electrical…
Graphene on Silicon Hybrid Field-Effect Transistors
Mykola Fomin, Francisco Pasadas, Enrique Marin +9
The combination of graphene with silicon in hybrid devices has attracted attention extensively over the last decade. Most of such devices were proposed for photonics and radiofrequ…
Compact Modeling of pH-Sensitive FETs Based on Two-Dimensional Semiconductors
Tarek El Grour, Francisco Pasadas, Alberto Medina-Rull +7
We present a physics-based circuit-compatible model for pH-sensitive field-effect transistors based on two-dimensional (2D) materials. The electrostatics along the electrolyte-gate…
Unveiling the impact of the bias-dependent charge neutrality point on graphene-based multi-transistor applications
Francisco Pasadas, Alberto Medina-Rull, Pedro Carlos Feijoo +6
The Dirac voltage of a graphene field-effect transistor (GFET) stands for the gate bias that sets the charge neutrality condition in the channel, thus resulting in a minimum conduc…
Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors
A. Toral-Lopez, F. Pasadas, E. G. Marin +5
Two-dimensional materials (2DMs) are a promising alternative to complement and upgrade high-frequency electronics. However, in order to boost their adoption, the availability of nu…
GFET Asymmetric Transfer Response Analysis through Access Region Resistances
A. Toral-Lopez, E. G. Marin, F. Pasadas +4
Graphene-based devices are planned to augment the functionality of Si and III-V based technology in radio-frequency (RF) electronics. The expectations in designing graphene {field-…
Does carrier velocity saturation help to enhance fmax in graphene field-effect transistors?
Pedro Carlos Feijoo, Francisco Pasadas, Marlene Bonmann +10
It has been argued that current saturation in graphene field-effect transistors (GFETs) is needed to get the highest possible maximum oscillation frequency (fmax). This paper numer…
Non-quasi-static effects in graphene field-effect transistors under high-frequency operation
Francisco Pasadas, David Jiménez
We have investigated the non-quasi-static (NQS) effects in graphene field-effect transistors (GFETs), which are relevant for GFET operation at high frequencies as a result of signi…
Large-signal model of the Metal-Insulator-Graphene diode targeting RF applications
Francisco Pasadas, Mohamed Saeed, Ahmed Hamed +4
We present a circuit-design compatible large-signal compact model of metal-insulator-graphene (MIG) diodes for describing its dynamic response for the first time. The model essenti…
Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor
Pedro C. Feijoo, Francisco Pasadas, José M. Iglesias +7
The quality of graphene in nanodevices has increased hugely thanks to the use of hexagonal boron nitride as a supporting layer. This paper studies to which extent hBN together with…