activity
20162025
most citedCompact modeling technology for the simulation of integrated circuits based on graphene field-effect transistors

42 citations · 207 across the 13 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

9 papers · 1 filter

cond-mat.mes-hall2023★ 22 cited

Exploiting ambipolarity in graphene field-effect transistors for novel designs on high-frequency analog electronics

Francisco Pasadas, Alberto Medina-Rull, Francisco G. Ruiz +8

Exploiting ambipolar electrical conductivity based on graphene field-effect transistors has raised enormous interest for high-frequency (HF) analog electronics. Controlling the dev…

cond-mat.mes-hall2023★ 5 cited

Characterization of the Intrinsic and Extrinsic Resistances of a Microwave Graphene FET Under Zero Transconductance Conditions

Xiomara Ribero-Figueroa, Anibal Pacheco-Sanchez, Aida Mansouri +7

Graphene field-effect transistors exhibit negligible transconductance under two scenarios: for any gate-to-source voltage when the drain-to-source voltage is set to zero, and for a…

cond-mat.mes-hall2021★ 35 cited

A Graphene Field-Effect Transistor Based Analogue Phase Shifter for High-Frequency Applications

A. Medina-Rull, F. Pasadas, E. G. Marin +5

We present a graphene-based phase shifter for radio-frequency (RF) phase-array applications. The core of the designed phase-shifting system consists of a graphene field-effect tran…

cond-mat.mes-hall2020★ 14 cited

Sensitivity Analysis of a Graphene Field-Effect Transistors by means of Design of Experiments

Giovanni Spinelli, Patrizia Lamberti, Vincenzo Tucci +2

Graphene, due to its unique electronic structure favoring high carrier mobility, is considered a promising material for use in high-speed electronic devices in the post-silicon ele…

cond-mat.mes-hall2020★ 26 cited

Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances

Francisco Pasadas, Enrique G. Marin, Alejandro Toral-Lopez +5

We present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor based field effect transistors, which provides explicit expressions for the drain…

cond-mat.mes-hall2018

Radio frequency performance projection and stability trade-off of h-BN encapsulated graphene field-effect transistors

Pedro C. Feijoo, Francisco Pasadas, José M. Iglesias +3

Hexagonal boron nitride (h-BN) encapsulation significantly improves carrier transport in graphene. This work investigates the benefit of implementing the encapsulation technique in…