42 citations · 368 across the 22 of their papers we have counts for
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cond-mat.mes-hall2020★ 14 cited
Sensitivity Analysis of a Graphene Field-Effect Transistors by means of Design of Experiments
Giovanni Spinelli, Patrizia Lamberti, Vincenzo Tucci +2
Graphene, due to its unique electronic structure favoring high carrier mobility, is considered a promising material for use in high-speed electronic devices in the post-silicon ele…
cond-mat.mes-hall2020★ 26 cited
Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances
Francisco Pasadas, Enrique G. Marin, Alejandro Toral-Lopez +5
We present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor based field effect transistors, which provides explicit expressions for the drain…