Large-signal model of the bilayer graphene field-effect transistor targeting radio-frequency applications: theory versus experiment

Abstract

Bilayer graphene is a promising material for radio-frequency transistors because its energy gap might result in a better current saturation than the monolayer graphene. Because the great deal of interest in this technology, especially for flexible radio-frequency applications, gaining control of it requires the formulation of appropriate models for the drain current, charge and capacitance. In this work we have developed them for a dual-gated bilayer graphene field-effect transistor. A drift-diffusion mechanism for the carrier transport has been considered coupled with an appropriate field-effect model taking into account the electronic properties of the bilayer graphene. Extrinsic resistances have been included considering the formation of a Schottky barrier at the metal-bilayer graphene interface. The proposed model has been benchmarked against experimental prototype transistors, discussing the main figures of merit targeting radio-frequency applications.

37 pages, 10 figures

References in corpus (5)

• Energy Band Gap Engineering of Graphene Nanoribbons
• Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
• Graphene field-effect-transistors with high on/off current ratio and large transport band gap at room temperature
• The electronic properties of bilayer graphene
• A physics based model of gate tunable metal-graphene contact resistance benchmarked against experimental data

Cited by in corpus (3)

• Large-Signal Model of Graphene Field-Effect Transistors -- Part I: Compact Modeling of GFET Intrinsic Capacitances
• Canted antiferromagnetism and excitonic order in gated double-layer graphene
• Graphene Field Effect Transistors: A Review