Electron Transport Properties of Bilayer Graphene
arXiv:1109.1035 · doi:10.1103/PhysRevB.84.195453
Abstract
Electron transport in bilayer graphene is studied by using a first principles analysis and theMonte Carlo simulation under conditions relevant to potential applications. While the intrinsic properties are found to be much less desirable in bilayer than in monolayer graphene, with significantly reduced mobilities and saturation velocities, the calculation also reveals the dominant influence of extrinsic factors such as the substrate and impurities. Accordingly, the difference between two graphene forms are more muted in realistic settings although the velocity-field characteristics remain substantially lower in the bilayer. When bilayer graphene is subject to an interlayer bias, the resulting changes in the energy dispersion lead to stronger electron scattering at the bottom of the conduction band. The mobility decreases significantly with the size of the generated bandgap, whereas the saturation velocity remains largely unaffected.
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- Electrically Tunable Interband Collective Excitations in Biased Bilayer and Trilayer Graphene
- Nonlinear intensity dependence of ratchet currents induced by terahertz laser radiation in bilayer graphene with asymmetric periodic grating gates
- Spatially dispersive dynamical response of hot carriers in doped graphene
- Large-signal model of the bilayer graphene field-effect transistor targeting radio-frequency applications: theory versus experiment
- Giant Magnetoresistance in Bilayer Graphene Nanoflakes
- Canted antiferromagnetism and excitonic order in gated double-layer graphene