activity
20062011
most citedElectronic structure of epitaxial graphene layers on SiC: effect of the substrate

762 citations · 1.3k across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mes-hall2011

Strong Substrate Dependence of Joule Heating in Graphene

X. Li, B. D. Kong, J. M. Zavada +1

The Joule heating effect on graphene electronic properties is investigated by using full-band Monte Carlo electron dynamics and three-dimensional heat transfer simulations self-con…

cond-mat.mes-hall2011★ 42 cited

Electron Transport Properties of Bilayer Graphene

X. Li, K. M. Borysenko, M. Buongiorno Nardelli +1

Electron transport in bilayer graphene is studied by using a first principles analysis and theMonte Carlo simulation under conditions relevant to potential applications. While the…

cond-mat.mes-hall2010

Electron-Phonon Interactions in Bilayer Graphene: A First Principles Approach

K. M. Borysenko, J. T. Mullen, X. Li +4

Density functional perturbation theory is used to analyze electron-phonon interaction in bilayer graphene. The results show that phonon scattering in bilayer graphene bears more re…

cond-mat.mtrl-sci2007★ 181 cited

The structural properties of the multi-layer graphene/4H-SiC(000-1) system as determined by Surface X-ray Diffraction

J. Hass, R. Feng, J. E. Millan-Otoya +6

We present a structural analysis of the multi-layer graphene-4HSiC(000-1}) system using Surface X-Ray Reflectivity. We show for the first time that graphene films grown on the C-te…

cond-mat.mtrl-sci2007★ 762 cited

Electronic structure of epitaxial graphene layers on SiC: effect of the substrate

François Varchon, R. Feng, J. Hass +8

Recent transport measurements on thin graphite films grown on SiC show large coherence lengths and anomalous integer quantum Hall effects expected for isolated graphene sheets. Thi…

cond-mat.mtrl-sci2006★ 349 cited

Highly-ordered graphene for two dimensional electronics

J. Hass, C. A. Jeffrey, R. Feng +7

With expanding interest in graphene-based electronics, it is crucial that high quality graphene films be grown. Sublimation of Si from the 4H-SiC(0001) Si-terminated) surface in ul…