Effect of high-K dielectrics on charge transport in graphene

Abstract

The effect of various dielectrics on charge mobility in single layer graphene is investigated. By calculating the remote optical phonon scattering arising from the polar substrates, and combining it with their effect on Coulombic impurity scattering, a comprehensive picture of the effect of dielectrics on charge transport in graphene emerges. It is found that though high-$\kappa$ dielectrics can strongly reduce Coulombic scattering by dielectric screening, scattering from surface phonon modes arising from them wash out this advantage. By comparing the room-temperature transport properties with narrow-bandgap III-V semiconductors, strategies to improve the mobility in single layer graphene are outlined.

6 pages, 4 Figures

References in corpus (22)

• Electric Field Effect in Atomically Thin Carbon Films
• Ultrahigh electron mobility in suspended graphene
• Energy Band Gap Engineering of Graphene Nanoribbons
• Suspended Graphene: a bridge to the Dirac point
• Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
• Room-Temperature Quantum Hall Effect in Graphene
• Dielectric function, screening, and plasmons in 2D graphene
• Room Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors
• Carrier transport in 2D graphene layers
• Temperature dependent transport in suspended graphene
• Veselago Lens for Electrons: Focusing and Caustics in Graphene p-n Junctions
• Acoustic phonon scattering limited carrier mobility in 2D extrinsic graphene
• Quantum transport of massless Dirac fermions in graphene
• Carrier Statistics and Quantum Capacitance of Graphene Sheets and Ribbons
• Substrate limited electron dynamics in graphene
• Enhancement of Carrier Mobility in Semiconductor Nanostructures by Dielectric Engineering
• Effect of high-k environment on charge carrier mobility in graphene
• Tuning the effective fine structure constant in graphene: opposing effects of dielectric screening on short- and long-range potential scattering
• The Deposition of High-Quality HfO2 on Graphene and the Effect of Remote Oxide Phonon Scattering
• Voltage and temperature dependencies of conductivity in gated graphene
• The Effects of Substrate Phonon Mode Scattering on Transport in Carbon Nanotubes
• Tailoring the carrier mobility of semiconducting nanowires by remote dielectrics

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• Acoustic phonon limited mobility in two-dimensional semiconductors: Deformation potential and piezoelectric scattering in monolayer MoS2 from first principles
• Charge Scattering and Mobility in Atomically Thin Semiconductors
• Unraveling the acoustic electron-phonon interaction in graphene
• Self-biased Reconfigurable Graphene Stacks for Terahertz Plasmonics
• Cooling of photoexcited carriers in graphene by internal and substrate phonons
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• Extrinsic and Intrinsic Charge Trapping at the Graphene/Ferroelectric Interface
• Theory of Interfacial Plasmon-Phonon Scattering in Supported Graphene
• Prospects of Direct Growth Boron Nitride Films as Substrates for Graphene Electronics
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• Strong mobility degradation in ideal graphene nanoribbons due to phonon scattering
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• Effects of optical and surface polar phonons on the optical conductivity of doped graphene
• Influence of the substrate on the diffusion coefficient and the momentum relaxation in graphene: the role of surface polar phonons
• Polaronic effects in monolayer black phosphorus on polar substrates
• Temperature dependence of the conductivity of graphene on boron nitride
• Electron Transport Properties of Bilayer Graphene
• Atomistic investigation of low-field mobility in graphene nanoribbons
• Flexural phonon scattering induced by electrostatic gating in graphene
• Friction force on slow charges moving over supported graphene
• Mechanically transferred large-area Ga${}_2$O${}_3$ passivates graphene and suppresses interfacial phonon scattering
• Linear magnetotransport in monolayer MoS${}_2$
• Dielectric function and plasmons in graphene: A self-consistent-field calculation within a Markovian master equation formalism
• High field response of gated graphene at THz frequencies
• Phonon-limited carrier mobility and resistivity from carbon nanotubes to graphene
• A Comparative Study of Substrates Disorder on Mobility in the Graphene Nanoribbon: Charged Impurity, Surface Optical Phonon, Surface Roughness
• Clustered impurities and carrier transport in supported graphene
• Ultrahigh Doping of Graphene Using Flame-Deposited MoO3
• Plasmon-phonon coupling in a valley-spin-polarized two-dimensional electron system: a theoretical study on monolayer silicene
• Screening effect on the optical absorption in graphene and metallic monolayers
• Room-temperature quantum transport signatures in graphene/LaAlO3/SrTiO3 heterostructures
• Nonlinear magnetotransport in a dc-current-biased graphene
• Inelastic Phonon Scattering in Graphene FETs
• EMC/FDTD/MD simulation of carrier transport and electrodynamics in two-dimensional electron systems
• Enhancement of Carrier Mobility in Semiconductor Nanostructures by Carrier Distribution Engineering
• Charged impurity scattering in bilayer-graphene double layers
• Full consideration of acoustic phonon scatterings in two-dimensional Dirac materials
• Power loss of hot Dirac fermions in silicene and its near equivalence with graphene
• Theoretical analysis of thermal boundary conductance of MoS2-SiO2 and WS2-SiO2 interface
• Gate-tunable cross-plane heat dissipation in single-layer transition metal dichalcogenides
• Remote Surface Optical Phonon Scattering in Ferroelectric Ba${}_{0.6}$Sr${}_{0.4}$TiO${}_3$ Gated Graphene
• Anisotropic ultrafast optical response of terahertz pumped graphene
• Spin polarised quantised transport via one-dimensional nanowire-graphene contacts
• THz response of nonequilibrium electrons of highly doped graphene on a polar substrate
• Ballistic conductivity of graphene channel with p-n junction on ferroelectric domain wall