Remote Surface Optical Phonon Scattering in Ferroelectric Ba${}_{0.6}$Sr${}_{0.4}$TiO${}_3$ Gated Graphene

Abstract

We report the effect of remote surface optical (RSO) phonon scattering on carrier mobility in monolayer graphene gated by ferroelectric oxide. We fabricate monolayer graphene transistors back-gated by epitaxial (001) Ba${}_{0.6}$Sr${}_{0.4}$TiO${}_3$ films, with field effect mobility up to 23,000 cm${}^2$V${}^{-1}$s${}^{-1}$ achieved. Switching the ferroelectric polarization induces nonvolatile modulation of resistance and quantum Hall effect in graphene at low temperatures. Ellipsometry spectroscopy studies reveal four pairs of optical phonon modes in Ba${}_{0.6}$Sr${}_{0.4}$TiO${}_3$, from which we extract the RSO phonon frequencies. The temperature dependence of resistivity in graphene can be well accounted for by considering the scattering from the intrinsic longitudinal acoustic phonon and the RSO phonon, with the latter dominated by the mode at 35.8 meV. Our study reveals the room temperature mobility limit of ferroelectric-gated graphene transistors imposed by RSO phonon scattering.

arXiv comment15 pages, 6 figures

References in corpus (25)

• Graphene Photonics and Optoelectronics
• Electronic transport in two dimensional graphene
• Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
• Observation of Electron-Hole Puddles in Graphene Using a Scanning Single Electron Transistor
• Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric
• Acoustic phonon scattering limited carrier mobility in 2D extrinsic graphene
• Substrate limited electron dynamics in graphene
• Enhancement of Carrier Mobility in Semiconductor Nanostructures by Dielectric Engineering
• Tuning the effective fine structure constant in graphene: opposing effects of dielectric screening on short- and long-range potential scattering
• Effect of high-K dielectrics on charge transport in graphene
• Inelastic Scattering and Current Saturation in Graphene
• Electron Beam Supercollimation in Graphene Superlattices
• Gate-controlled non-volatile graphene-ferroelectric memory
• High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides
• High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides (Supplementary Information)
• The Deposition of High-Quality HfO2 on Graphene and the Effect of Remote Oxide Phonon Scattering
• The quantum scattering time and its implications on scattering sources in graphene
• The quantum scattering time and its implications on scattering sources in graphene (Supplementary)
• Mechanism for current saturation and energy dissipation in graphene transistors
• Theory of Interfacial Plasmon-Phonon Scattering in Supported Graphene
• An integrated mid-infrared, far-infrared and terahertz optical Hall effect instrument
• Polar Coupling Enabled Nonlinear Optical Filtering at MoS${}_2$/Ferroelectric Heterointerfaces
• Integrating Functional Oxides with Graphene
• Optical phonon modes, static and high frequency dielectric constants, and effective electron mass parameter in cubic In${}_2$O${}_3$
• Giant Transport Anisotropy in ReS${}_2$ Revealed via Nanoscale Conducting Path Control

Cited by in corpus (1)

• Transport Anisotropy in One-dimensional Graphene Superlattice in the High Kronig-Penney Potential Limit