Phonon-limited carrier mobility and resistivity from carbon nanotubes to graphene

Abstract

Under which conditions do the electrical transport properties of one-dimensional (1D) carbon nanotubes (CNTs) and 2D graphene become equivalent? We have performed atomistic calculations of the phonon-limited electrical mobility in graphene and in a wide range of CNTs of different types to address this issue. The theoretical study is based on a tight-binding method and a force-constant model from which all possible electron-phonon couplings are computed. The electrical resistivity of graphene is found in very good agreement with experiments performed at high carrier density. A common methodology is applied to study the transition from 1D to 2D by considering CNTs with diameter up to 16 nm. It is found that the mobility in CNTs of increasing diameter converges to the same value, the mobility in graphene. This convergence is much faster at high temperature and high carrier density. For small-diameter CNTs, the mobility strongly depends on chirality, diameter, and existence of a bandgap.

12 pages

References in corpus (14)

• The electronic properties of graphene
• Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
• Temperature dependent transport in suspended graphene
• Controlling electron-phonon interactions in graphene at ultra high carrier densities
• Acoustic phonon scattering limited carrier mobility in 2D extrinsic graphene
• Electronic transport in graphene: A semi-classical approach including midgap states
• Limits on electron quality in suspended graphene due to flexural phonons
• Electron Transport and Hot Phonons in Carbon Nanotubes
• Non-equilibrium Green's function treatment of phonon scattering in carbon nanotube transistors
• Electron-Phonon Interactions and the Intrinsic Electrical Resistivity of Graphene
• Phonon-limited resistivity of graphene by first-principle calculations: electron-phonon interactions, strain-induced gauge field and Boltzmann equation
• Efficient and accurate three dimensional Poisson solver for surface problems
• Doped graphene as tunable electron-phonon coupling material
• Inelastic Quantum Transport and Peierls-like Mechanism in Carbon Nanotubes

Cited by in corpus (3)

• Two dimensional silicon chalcogenides with high carrier mobility for photocatalytic water splitting
• Spin polarised quantised transport via one-dimensional nanowire-graphene contacts
• Phonon-Limited Mobility in H/F-functionalized Nanotubes with 1D $\pi$-chains