Multi-Band Mobility in Semiconducting Carbon Nanotubes
arXiv:0907.1261 · doi:10.1109/LED.2009.2027615
Abstract
We present new data and a compact mobility model for single-wall carbon nanotubes, with only two adjustable parameters, the elastic and inelastic collision mean free paths at 300 K. The mobility increases with diameter, decreases with temperature, and has a more complex dependence on charge density. The model and data suggest the room temperature mobility does not exceed 10,000 cm2/V.s at high carrier density (n > 0.5 nm-1) for typical single-wall nanotube diameters, due to the strong scattering effect of the second subband.
accepted in IEEE Electron Device Letters
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- A Compact Virtual-Source Model for Carbon Nanotube Field-Effect Transistors in the Sub-10-nm Regime - Part II Extrinsic Elements, Performance Assessment, and Design Optimization
- Reduction of Hysteresis for Carbon Nanotube Mobility Measurements Using Pulsed Characterization
- Thermal Dissipation and Variability in Electrical Breakdown of Carbon Nanotube Devices
- Phonon-limited carrier mobility and resistivity from carbon nanotubes to graphene
- Effects of Tip-Nanotube Interactions on Atomic Force Microscopy Imaging of Carbon Nanotubes
- Phonon-Limited Mobility in H/F-functionalized Nanotubes with 1D -chains