Reduction of Hysteresis for Carbon Nanotube Mobility Measurements Using Pulsed Characterization

Abstract

We describe a pulsed measurement technique to suppress hysteresis for carbon nanotube (CNT) device measurements in air, vacuum, and over a wide temperature range (80-453 K). Varying the gate pulse width and duty cycle probes the relaxation times associated with charge trapping near the CNT, found to be up to the 0.1-10 s range. Longer off times between voltage pulses enable consistent, hysteresis-free measurements of CNT mobility. A tunneling front model for charge trapping and relaxation is also described, suggesting trap depths up to 4-8 nm for CNTs on SiO2. Pulsed measurements will also be applicable to other nanoscale devices such as graphene, nanowires, and molecular electronics, and could enable probing trap relaxation times in a variety of material system interfaces.

References in corpus (3)

• Gate capacitance of back-gated nanowire field-effect transistors
• Multi-Band Mobility in Semiconducting Carbon Nanotubes
• Avalanche-Induced Current Enhancement in Semiconducting Carbon Nanotubes

Cited by in corpus (6)

• Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure
• Thermal Dissipation and Variability in Electrical Breakdown of Carbon Nanotube Devices
• Hysteresis-Free Nanosecond Pulsed Electrical Characterization of Top-Gated Graphene Transistors
• Gate-modulated conductance of few-layer WSe_2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states
• Field emission microscopy of carbon nanotube fibers: evaluating and interpreting spatial emission
• Electrical power dissipation in carbon nanotubes on single crystal quartz and amorphous SiO2