Avalanche-Induced Current Enhancement in Semiconducting Carbon Nanotubes
arXiv:0808.1148 · doi:10.1103/PhysRevLett.101.256804
Abstract
Semiconducting carbon nanotubes under high electric field stress (~10 V/um) display a striking, exponential current increase due to avalanche generation of free electrons and holes. Unlike in other materials, the avalanche process in such 1D quantum wires involves access to the third sub-band, is insensitive to temperature, but strongly dependent on diameter ~exp(-1/d^2). Comparison with a theoretical model yields a novel approach to obtain the inelastic optical phonon emission length, L_OP,ems ~ 15d nm. The combined results underscore the importance of multi-band transport in 1D molecular wires.
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- Multi-Band Mobility in Semiconducting Carbon Nanotubes
- Imaging Dissipation and Hot Spots in Carbon Nanotube Network Transistors
- Inducing Chalcogenide Phase Change with Ultra-Narrow Carbon Nanotube Heaters
- Ultrafast photocurrent measurement of the escape time of electrons and holes from carbon nanotube PN junction photodiodes
- Effects of Tip-Nanotube Interactions on Atomic Force Microscopy Imaging of Carbon Nanotubes
- High field electro-thermal transport in metallic carbon nanotubes
- Kinetics Modeling of Nanoparticle Growth on and Evaporation off Nanotubes
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