Device modeling of long-channel nanotube electro-optical emitter

Abstract

We present a simple analytic model of nanotube electro-optical emitters, along with improved experimental measurements using PMMA-passivated devices with reduced hysteresis. Both the ambipolar electrical characteristics and the motion of the infrared-emission spot are well described. The model indicates that the electric field is strongly enhanced at the emission spot, and that device performance can be greatly improved by the use of thinner gate oxides.

References in corpus (3)

• Carbon Nanotubes as Schottky Barrier Transistors
• Drain Voltage Scaling in Carbon Nanotube Transistors
• Unexpected Scaling of the Performance of Carbon Nanotube Transistors

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