6 papers
Device modeling of long-channel nanotube electro-optical emitter
J. Tersoff, Marcus Freitag, James C. Tsang +1
We present a simple analytic model of nanotube electro-optical emitters, along with improved experimental measurements using PMMA-passivated devices with reduced hysteresis. Both t…
Electron-phonon effects and transport in carbon nanotubes
Vasili Perebeinos, J. Tersoff, Phaedon Avouris
We calculate the electron-phonon scattering and binding in semiconducting carbon nanotubes, within a tight binding model. The mobility is derived using a multi-band Boltzmann treat…
Scaling of excitons in carbon nanotubes
Vasili Perebeinos, J. Tersoff, Phaedon Avouris
Light emission from carbon nanotubes is expected to be dominated by excitonic recombination. Here we calculate the properties of excitons in nanotubes embedded in a dielectric, for…
Electrostatic Engineering of Nanotube Transistors for Improved Performance
S. Heinze, J. Tersoff, Ph. Avouris
With decreasing device dimensions, the performance of carbon nanotube field-effect transistors (CNFETs) is limited by high Off currents except at low drain voltages. We show that a…
Prepyramid-to-pyramid transition of SiGe islands on Si(001)
A. Rastelli, H. von Kaenel, B. J. Spencer +1
The morphology of the first three-dimensional islands appearing during strained growth of SiGe alloys on Si(001) was investigated by scanning tunneling microscopy. High resolution…
Drain Voltage Scaling in Carbon Nanotube Transistors
M. Radosavljevic, S. Heinze, J. Tersoff +1
While decreasing the oxide thickness in carbon nanotube field-effect transistors (CNFETs) improves the turn-on behavior, we demonstrate that this also requires scaling the range of…