activity
19982025
most citedCarbon Nanotubes as Schottky Barrier Transistors

1.3k citations · 2.7k across the 14 of their papers we have counts for

collaborators

14 papers

cond-mat.mtrl-sci2025

Generalized energy band alignment model for van der Waals heterostructures with a charge spillage dipole

Seungjun Lee, Eng Hock Lee, Young-Kyun Kwon +5

The energy band alignment at the interface of van der Waals heterostructures (vdWHs) is a key design parameter for next-generation electronic and optoelectronic devices. Although t…

cond-mat.mes-hall2013★ 19 cited

Schottky-to-Ohmic Crossover in Carbon Nanotube Transistor Contacts

Vasili Perebeinos, Jerry Tersoff, Wilfried Haensch

For carbon nanotube transistors, as for graphene, the electrical contacts are a key factor limiting device performance. We calculate the device characteristics as a function of nan…

cond-mat.mes-hall2012★ 68 cited

Phonon mediated interlayer conductance in twisted graphene bilayers

V. Perebeinos, J. Tersoff, Ph. Avouris

Conduction between graphene layers is suppressed by momentum conservation whenever the layer stacking has a rotation. Here we show that phonon scattering plays a crucial role in fa…

cond-mat.mes-hall2012★ 95 cited

Deformation and scattering in graphene over substrate steps

Tony Low, Vasili Perebeinos, Jerry Tersoff +1

The electrical properties of graphene depend sensitively on the substrate. For example, recent measurements of epitaxial graphene on SiC show resistance arising from steps on the s…

cond-mat.mtrl-sci2009★ 65 cited

Valence Force Model for Phonons in Graphene and Carbon Nanotubes

Vasili Perebeinos, J. Tersoff

Many calculations require a simple classical model for the interactions between sp^2-bonded carbon atoms, as in graphene or carbon nanotubes. Here we present a new valence force mo…

cond-mat.mtrl-sci2005★ 56 cited

Mobility in semiconducting carbon nanotubes at finite carrier density

Vasili Perebeinos, J. Tersoff, Phaedon Avouris

Carbon nanotube field-effect transistors operate over a wide range of electron or hole density, controlled by the gate voltage. Here we calculate the mobility in semiconducting nan…