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Generalized energy band alignment model for van der Waals heterostructures with a charge spillage dipole
Seungjun Lee, Eng Hock Lee, Young-Kyun Kwon +5
The energy band alignment at the interface of van der Waals heterostructures (vdWHs) is a key design parameter for next-generation electronic and optoelectronic devices. Although t…
Valence Force Model for Phonons in Graphene and Carbon Nanotubes
Vasili Perebeinos, J. Tersoff
Many calculations require a simple classical model for the interactions between sp^2-bonded carbon atoms, as in graphene or carbon nanotubes. Here we present a new valence force mo…
Mobility in semiconducting carbon nanotubes at finite carrier density
Vasili Perebeinos, J. Tersoff, Phaedon Avouris
Carbon nanotube field-effect transistors operate over a wide range of electron or hole density, controlled by the gate voltage. Here we calculate the mobility in semiconducting nan…
Radiative Lifetime of Excitons in Carbon Nanotubes
Vasili Perebeinos, J. Tersoff, Phaedon Avouris
We calculate the radiative lifetime and energy bandstructure of excitons in semiconducting carbon nanotubes, within a tight-binding approach. In the limit of rapid interband therma…
Exciton-phonon effects in carbon nanotube optical absorption
Vasili Perebeinos, J. Tersoff, Phaedon Avouris
We find that the optical properties of carbon nanotubes reflect remarkably strong effects of exciton-phonon coupling. Tight-binding calculations show that a significant fraction of…
Unexpected Scaling of the Performance of Carbon Nanotube Transistors
S. Heinze, M. Radosavljevic, J. Tersoff +1
We show that carbon nanotube transistors exhibit scaling that is qualitatively different than conventional transistors. The performance depends in an unexpected way on both the thi…