Deformation and scattering in graphene over substrate steps
arXiv:1201.4426 · doi:10.1103/PhysRevLett.108.096601
Abstract
The electrical properties of graphene depend sensitively on the substrate. For example, recent measurements of epitaxial graphene on SiC show resistance arising from steps on the substrate. Here we calculate the deformation of graphene at substrate steps, and the resulting electrical resistance, over a wide range of step heights. The elastic deformations contribute only a very small resistance at the step. However, for graphene on SiC(0001) there is strong substrate-induced doping, and this is substantially reduced on the lower side of the step where graphene pulls away from the substrate. The resulting resistance explains the experimental measurements.
To appear Phys. Rev. Lett. (2012)
References in corpus (10)
- The electronic properties of graphene
- Boron nitride substrates for high-quality graphene electronics
- Doping graphene with metal contacts
- All-graphene integrated circuits via strain engineering
- Quantum-limited shot noise in graphene
- Ab initio Study of Graphene on SiC
- Evidence of the role of contacts on the observed electron-hole asymmetry in graphene
- Multiply Folded Graphene
- Pseudomagnetic fields and ballistic transport in a suspended graphene sheet
- Charge transfer between epitaxial graphene and silicon carbide
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