Gate-Tunable Resonances and 1D Channel in a Graphene Nanoslide
arXiv:2512.22982 · doi:10.1103/g6fn-xnf3
Abstract
We present a theory of the graphene nanoslide, a fundamental device for graphene straintronics that realizes a single pseudogauge barrier. We solve the scattering problem in closed form and demonstrate that the nanoslide gives rise to a hybrid pseudogauge and electrostatic cavity in the bipolar regime, and hosts one-dimensional transverse channels. The latter can be tuned using a bottom gate between valley-chiral or counterpropagating modes, as well as one-dimensional flatbands. Hence, the local density of states near the barrier depends strongly on the gate voltage with a tunable sublattice and electron-hole asymmetry. In the presence of electron-electron interactions, the nanoslide allows for \textit{in-situ} tuning between a chiral and ordinary Tomonaga-Luttinger liquid.
6 + 12 pages, 4 + 1 figures
References in corpus (15)
- The electronic properties of graphene
- A tight-binding approach to uniaxial strain in graphene
- Quantum Goos-Hanchen effect in graphene
- Gauge field induced by ripples in graphene
- Chiral anomaly from strain-induced gauge fields in Dirac and Weyl semimetals
- Evidence of Flat Bands and Correlated States in Buckled Graphene Superlattices
- Gaps tunable by electrostatic gates in strained graphene
- Midgap states in corrugated graphene: Ab-initio calculations and effective field theory
- Aharonov-Bohm Oscillations in Minimally Twisted Bilayer Graphene
- Boundary Modes from Periodic Magnetic and Pseudomagnetic Fields in Graphene
- Correlation-induced valley topology in buckled graphene superlattices
- Network model for periodically strained graphene
- Gate-tunable Veselago Interference in a Bipolar Graphene Microcavity
- General scatterings and electronic states in the quantum-wire network of moiré systems
- Electrically tunable correlated domain wall network in twisted bilayer graphene