High sensitive quasi freestanding epitaxial graphene gassensor on 6H-SiC

Abstract

We have measured the electrical response to NO${}_2$, N${}_2$, NH${}_3$ and CO for epitaxial graphene and quasi freestanding epitaxial graphene on 6H-SiC substrates. Quasi freestanding epitaxial graphene shows a 6 fold increase in NO2 sensitivity compared to epitaxial graphene. Both samples show a sensitivity better than the experimentally limited 1 ppb. The strong increase in sensitivity of quasi freestanding epitaxial graphene can be explained by a Fermi-energy close to the Dirac Point leading to a strongly surface doping dependent sample resistance. Both sensors show a negligible sensitivity to N${}_2$, NH${}_3$ and CO.

References in corpus (5)

• The Raman Fingerprint of Graphene
• Detection of Individual Gas Molecules Absorbed on Graphene
• Adsorption of H2O, NH3, CO, NO2, and NO on graphene: A first-principles study
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• High sensitive quasi freestanding epitaxial graphene gassensor on 6H-SiC

Cited by in corpus (3)

• High sensitive quasi freestanding epitaxial graphene gassensor on 6H-SiC
• High performance sensors based on resistance fluctuations of single layer graphene transistors
• Electric-field-driven conductance switching in encapsulated graphene nanogaps