Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale

Abstract

We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on the Si-face of SiC [SiC(0001)] is not only highly dependent on thickness uniformity but also on monolayer strain uniformity. Only when both thickness and strain are uniform over a significant fraction (> 40%) of the device active area does the mobility exceed 1000 cm2/V-s. Additionally, we achieve high mobility epitaxial graphene (18,100 cm2/V-s at room temperature) on the C-face of SiC [SiC(000-1)] and show that carrier mobility depends strongly on the graphene layer stacking. These findings provide a means to rapidly estimate carrier mobility and provide a guide to achieve very high mobility in epitaxial graphene. Our results suggest that ultra-high mobilities (>50,000 cm2/V-s) are achievable via the controlled formation of uniform, rotationally faulted epitaxial graphene.

13 pages including supplimental material. Submitted to Nature Materials 2/23/2009

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• Two Dimensional Atomic Crystals
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• Epitaxial graphene
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• Hot carrier diffusion in graphene
• Wafer-scale Epitaxial Graphene Growth on the Si-face of Hexagonal SiC (0001) for High Frequency Transistors
• Deformation and scattering in graphene over substrate steps
• Graphene Nanoribbon Field-Effect Transistors on Wafer-Scale Epitaxial Graphene on SiC substrates
• Theory of Interfacial Plasmon-Phonon Scattering in Supported Graphene
• Morphology Characterization of Argon-Mediated Epitaxial Graphene on C-face SiC
• CO2 Laser-Induced Growth of Epitaxial Graphene on 6H-SiC(0001)
• Introduction to Graphene Electronics -- A New Era of Digital Transistors and Devices
• A Chemical Route to Graphene for Electronics and Spintronics Device Applications
• Effect of residual gas composition on epitaxial graphene growth on SiC
• Homogeneous Large-area Quasi-freestanding Monolayer and Bilayer Graphene on SiC
• Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions
• Quantum Hall effect in graphene with twisted bilayer stripe defects
• Multilayer epitaxial graphene formed by pyrolysis of polycrystalline silicon-carbide grown on c-plane sapphire substrates
• Quantum-Hall plateau-plateau transition in top-gated epitaxial graphene grown on SiC (0001)
• Inelastic carrier lifetime in a coupled graphene electron-phonon system: Role of plasmon-phonon coupling
• Molecular beam growth of graphene on mica
• Epitaxial graphene morphologies probed by weak (anti)-localization
• Rapid characterization of wafer-scale 2D material: Epitaxial graphene and graphene nanoribbons on SiC
• Epitaxial graphene homogeneity and quantum Hall effect in millimeter-scale devices
• High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen