217 citations · 1.3k across the 13 of their papers we have counts for
13 papers
Experimental Observation of Localized Interfacial Phonon Modes
Zhe Cheng, Ruiyang Li, Xingxu Yan +12
Interfaces impede heat flow in micro/nanostructured systems. Conventional theories for interfacial thermal transport were derived based on bulk phonon properties of the materials m…
A 10 mK hermetic cell for eliminating parasitic heating in cryogen-free dilution refrigerators
David Schmoranzer, Sumit Kumar, Sébastien Triqueneaux +5
Cryogen-free dilution refrigerators generally simplify low temperature research but some types of samples, including superconducting qubits and other nanoelectronic devices, are af…
Thermal coupling of silicon oscillators in cryogen-free dilution refrigerators
David Schmoranzer, Sumit Kumar, Annina Luck +5
Silicon double paddle osillators (DPO) have been successfully used for measuring the elastic properties of amorphous films down to 10 mK (see for example \cite{Fefferman16,Liu14}).…
The Effect of Preparation Conditions on Raman and Photoluminescence of Monolayer WS2
Kathleen M. McCreary, Aubrey T. Hanbicki, Simranjeet Singh +7
We report on preparation dependent properties observed in monolayer WS2 samples synthesized via chemical vapor deposition (CVD) on a variety of common substrates (Si/SiO2, sapphire…
Elastic measurements of amorphous silicon films at mK temperatures
Andrew Fefferman, Ana Maldonado, Eddy Collin +3
The low temperature properties of glass are distinct from those of crystals due to the presence of poorly understood low-energy excitations. The tunneling model proposes that these…
Synthesis of Large-Area WS2 monolayers with Exceptional Photoluminescence
Kathleen M. McCreary, Aubrey T. Hanbicki, Glenn G. Jernigan +2
Monolayer WS2 offers great promise for use in optical devices due to its direct bandgap and high photoluminescence intensity. While fundamental investigations can be performed on e…
Morphology Characterization of Argon-Mediated Epitaxial Graphene on C-face SiC
Joseph L. Tedesco, Glenn G. Jernigan, James C. Culbertson +10
Epitaxial graphene layers were grown on the C-face of 4H- and 6H-SiC using an argon-mediated growth process. Variations in growth temperature and pressure were found to dramaticall…
Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates
Joshua D. Caldwell, Travis J. Anderson, James C. Culbertson +11
In order to make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry transfer of…
Epitaxial Graphene Growth on SiC Wafers
D. Kurt Gaskill, Glenn G. Jernigan, Paul M. Campbell +17
An in vacuo thermal desorption process has been accomplished to form epitaxial graphene (EG) on 4H- and 6H-SiC substrates using a commercial chemical vapor deposition reactor. Corr…
Improvement of Morphology and Free Carrier Mobility through Argon-Assisted Growth of Epitaxial Graphene on Silicon Carbide
Joseph L. Tedesco, Brenda L. VanMil, Rachael L. Myers-Ward +7
Graphene was epitaxially grown on both the C- and Si-faces of 4H- and 6H-SiC(0001) under an argon atmosphere and under high vacuum conditions. Following growth, samples were imaged…
Graphene formation on SiC substrates
Brenda L. VanMil, Rachael L. Myers-Ward, Joseph L. Tedesco +7
Graphene layers were created on both C and Si faces of semi-insulating, on-axis, 4H- and 6H-SiC substrates. The process was performed under high vacuum (<10-4 mbar) in a commercial…
Hall Effect Mobility of Epitaxial Graphene Grown on Silicon Carbide
Joseph L. Tedesco, Brenda L. VanMil, Rachael L. Myers-Ward +7
Epitaxial graphene films were grown in vacuo by silicon sublimation from the (0001) and (000-1) faces of 4H- and 6H-SiC. Hall effect mobilities and sheet carrier densities of the f…
Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale
Joshua A. Robinson, Maxwell Wetherington, Joseph L. Tedesco +11
We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on the…