Morphology Characterization of Argon-Mediated Epitaxial Graphene on C-face SiC

Abstract

Epitaxial graphene layers were grown on the C-face of 4H- and 6H-SiC using an argon-mediated growth process. Variations in growth temperature and pressure were found to dramatically affect the morphological properties of the layers. The presence of argon during growth slowed the rate of graphene formation on the C-face and led to the observation of islanding. The similarity in the morphology of the islands and continuous films indicated that island nucleation and coalescence is the growth mechanism for C-face graphene.

12 pages, 4 figures

References in corpus (4)

• Epitaxial graphene
• Approaching the Dirac point in high mobility multi-layer epitaxial graphene
• Weak antilocalization in epitaxial graphene: evidence for chiral electrons
• Early stage formation of graphene on the C-face of 6H-SiC

Cited by in corpus (12)

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• Argon Assisted Growth of Epitaxial Graphene on Cu(111)
• Role of structure of C-terminated 4H-SiC(000) surface in growth of graphene layers - transmission electron microscopy and density functional theory studies
• Growth of thin graphene layers on stacked SiC surface in ultra high vacuum
• Growth of Large Domain Epitaxial Graphene on the C-Face of SiC
• Polarization selection rules for inter-Landau level transitions in epitaxial graphene revealed by infrared optical Hall effect
• Quantum-Hall plateau-plateau transition in top-gated epitaxial graphene grown on SiC (0001)
• Formation of a Buffer Layer for Graphene on C-face SiC{0001}
• Suppression of nucleation density in twisted graphene domains grown on graphene/SiC template by sequential thermal process
• Formation of Graphene on SiC(000-1) Surfaces in Disilane and Neon Environments