8 citations · 17 across the 6 of their papers we have counts for
6 papers
III-Nitride Nanowire Based Light Emitting Diodes on Carbon Paper
Michael A. Mastro, Travis J. Anderson, Marko J. Tadjer +4
This article presents the use of flexible carbon substrates for the growth of III-nitride nanowire light emitters. A dense packing of gallium nitride nanowires were grown on a carb…
Nickel Foam as a Substrate for III-nitride Nanowire Growth
Michael A. Mastro, Neeraj Nepal, Fritz Kub +3
This article presents the use of flexible metal foam substrates for the growth of III-nitride nanowire light emitters to tackle the inherent limitations of thin-film light emitting…
Polarization and Space Charge Limited Current in III-Nitride Heterostructure Nanowires
Michael A. Mastro, Hong-Youl Kim, Jaehui Ahn +5
An undoped AlGaN/GaN nanowire demonstrated p-type conductivity based solely on the formation of hole carriers in response to the negative polarization field at the (000-1) AlGaN/Ga…
Plasmonically-Enhanced Emission from an Inverted GaN Light Emitting Diode
Michael A. Mastro, Byung-Jae Kim, J. A. Freitas +5
Silver nanoparticles dispersed on the surface of an inverted GaN LED were found to plasmonically enhance the near-bandedge emission. The resonant surface plasmon coupling led to a…
All Epitaxial Fabrication of a Nanowire Plasmon Laser Structure
Michael A. Mastro, Jaime A. Freitas, Jennifer K. Hite +1
An all-epitaxial approach was demonstrated to create coaxial plasmon laser structures composed of an alumi-num plasmonic metal / SiNx dielectric / InGaN quantum well shell surround…
Opportunities and Challenges in MOCVD of β-Ga2O3 for Power Electronic Devices
M. A. Mastro, J. K. Hite, C. R. Eddy +4
Recent breakthroughs in bulk crystal growth of beta-Ga2O3 by the edge-defined film-fed technique has led to the commercialization of large-area beta-Ga2O3 substrates. Standard epit…