Assessment of the (010) $β$-Ga$_2$O$_3$ Surface and Substrate Specification

Michael A. Mastro; Charles R. Eddy,; Marko J. Tadjer; Jennifer K. Hite; Jihyun Kim; Stephen J. Pearton

doi:10.1116/6.0000725

paper

Assessment of the (010) $β$ -Ga $_{2}$ O $_{3}$ Surface and Substrate Specification

arXiv:2105.03741 · doi:10.1116/6.0000725

Abstract

Recent breakthroughs in bulk crystal growth of the thermodynamically stable beta phase of gallium oxide ( $β$ -Ga $_{2}$ O $_{3}$ ) have led to the commercialization of large-area beta-Ga $_{2}$ O $_{3}$ substrates with subsequent epitaxy on (010) substrates producing high-quality films. Still, metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), and processing of the (010) $β$ -Ga $_{2}$ O $_{3}$ surface are known to form sub-nanometer scale facets along the [001] direction as well as larger ridges with features perpendicular to the [001] direction. A density function theory calculation of the (010) surface shows an ordering of the surface as a sub-nanometer-scale feature along the [001] direction. Additionally, the general crystal structure of $β$ -Ga $_{2}$ O $_{3}$ is presented and recommendations are presented for standardizing (010) substrates to account for and control the larger-scale ridge formation.

12 pages, 8 figures

Assessment of the (010) β-Ga2​O3​ Surface and Substrate Specification

Abstract

References in corpus (4)

Assessment of the (010) $β$ -Ga $_{2}$ O $_{3}$ Surface and Substrate Specification