29 citations · 91 across the 13 of their papers we have counts for
13 papers
Design of Ga2O3 Modulation Doped Field Effect Transistors
Michael Mastro, Marko J. Tadjer, Jihyun Kim +2
The design of beta-Ga2O3-based modulation doped field effect transistors (MODFETs) is discussed with a focus on the role of self-heating and resultant modification of the electron…
Assessment of the (010) -GaO Surface and Substrate Specification
Michael A. Mastro, Charles R. Eddy, Marko J. Tadjer +3
Recent breakthroughs in bulk crystal growth of the thermodynamically stable beta phase of gallium oxide (-GaO) have led to the commercialization of large-area beta-Ga$_2…
III-Nitride Nanowire Based Light Emitting Diodes on Carbon Paper
Michael A. Mastro, Travis J. Anderson, Marko J. Tadjer +4
This article presents the use of flexible carbon substrates for the growth of III-nitride nanowire light emitters. A dense packing of gallium nitride nanowires were grown on a carb…
Nickel Foam as a Substrate for III-nitride Nanowire Growth
Michael A. Mastro, Neeraj Nepal, Fritz Kub +3
This article presents the use of flexible metal foam substrates for the growth of III-nitride nanowire light emitters to tackle the inherent limitations of thin-film light emitting…
Polarization and Space Charge Limited Current in III-Nitride Heterostructure Nanowires
Michael A. Mastro, Hong-Youl Kim, Jaehui Ahn +5
An undoped AlGaN/GaN nanowire demonstrated p-type conductivity based solely on the formation of hole carriers in response to the negative polarization field at the (000-1) AlGaN/Ga…
Plasmonically-Enhanced Emission from an Inverted GaN Light Emitting Diode
Michael A. Mastro, Byung-Jae Kim, J. A. Freitas +5
Silver nanoparticles dispersed on the surface of an inverted GaN LED were found to plasmonically enhance the near-bandedge emission. The resonant surface plasmon coupling led to a…
High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates
M. A. Mastro, R. T. Holm, N. D. Bassim +4
Distributed Bragg reflectors (DBRs) composed of an AlN/AlGaN superlattice were grown of Si (111) substrates. The first high-reflectance III-nitride DBR on Si was achieved by growin…
All Epitaxial Fabrication of a Nanowire Plasmon Laser Structure
Michael A. Mastro, Jaime A. Freitas, Jennifer K. Hite +1
An all-epitaxial approach was demonstrated to create coaxial plasmon laser structures composed of an alumi-num plasmonic metal / SiNx dielectric / InGaN quantum well shell surround…
Two-Dimensional Electron Gas as a Basis for Low-Loss Hyperbolic Metamaterials
Michael A. Mastro
The implementation of hyperbolic metamaterials as component in optical waveguides, semiconductor light emitters and solar cells has been limited by the inherent loss in the metalli…
Ultra-Thin Absorber based on Phase Change Metamaterial Superlattice
Michael A. Mastro, Virginia D. Wheeler
In this paper, a superlattice VO2/SiO2 metamaterial on a lossy substrate is designed to create a near perfect absorber with tunability across the infrared spectrum. We selected VO2…
Metalorganic chemical-vapor deposition of high-reflectance III-nitride distributed Bragg reflectors on Si substrates
M. A. Mastro, R. T. Holm, N. D. Bassim +6
High-reflectance group III-nitride distributed Bragg reflectors (DBRs) were deposited by MOCVD on Si (111) substrates. A reflectance greater than 96% was demonstrated for the first…
Zinc Sulphide Overlayer Two-Dimensional Photonic Crystal for Enhanced Extraction of Light from a Micro Cavity Light-Emitting Diode
Michael A. Mastro, Chul Soo Kim, Mijin Kim +6
A two-dimensional (2D) ZnS photonic crystal was deposited on the surface of a one-dimensional (1D) III-nitride micro cavity light-emitting diode (LED), to intermix the light extrac…
Opportunities and Challenges in MOCVD of β-Ga2O3 for Power Electronic Devices
M. A. Mastro, J. K. Hite, C. R. Eddy +4
Recent breakthroughs in bulk crystal growth of beta-Ga2O3 by the edge-defined film-fed technique has led to the commercialization of large-area beta-Ga2O3 substrates. Standard epit…