29 citations · 61 across the 11 of their papers we have counts for
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Design of Ga2O3 Modulation Doped Field Effect Transistors
Michael Mastro, Marko J. Tadjer, Jihyun Kim +2
The design of beta-Ga2O3-based modulation doped field effect transistors (MODFETs) is discussed with a focus on the role of self-heating and resultant modification of the electron…
III-Nitride Nanowire Based Light Emitting Diodes on Carbon Paper
Michael A. Mastro, Travis J. Anderson, Marko J. Tadjer +4
This article presents the use of flexible carbon substrates for the growth of III-nitride nanowire light emitters. A dense packing of gallium nitride nanowires were grown on a carb…
Nickel Foam as a Substrate for III-nitride Nanowire Growth
Michael A. Mastro, Neeraj Nepal, Fritz Kub +3
This article presents the use of flexible metal foam substrates for the growth of III-nitride nanowire light emitters to tackle the inherent limitations of thin-film light emitting…
Polarization and Space Charge Limited Current in III-Nitride Heterostructure Nanowires
Michael A. Mastro, Hong-Youl Kim, Jaehui Ahn +5
An undoped AlGaN/GaN nanowire demonstrated p-type conductivity based solely on the formation of hole carriers in response to the negative polarization field at the (000-1) AlGaN/Ga…
Plasmonically-Enhanced Emission from an Inverted GaN Light Emitting Diode
Michael A. Mastro, Byung-Jae Kim, J. A. Freitas +5
Silver nanoparticles dispersed on the surface of an inverted GaN LED were found to plasmonically enhance the near-bandedge emission. The resonant surface plasmon coupling led to a…
High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates
M. A. Mastro, R. T. Holm, N. D. Bassim +4
Distributed Bragg reflectors (DBRs) composed of an AlN/AlGaN superlattice were grown of Si (111) substrates. The first high-reflectance III-nitride DBR on Si was achieved by growin…