Nickel Foam as a Substrate for III-nitride Nanowire Growth
arXiv:2009.02143 · doi:10.1557/opl.2013.504
Abstract
This article presents the use of flexible metal foam substrates for the growth of III-nitride nanowire light emitters to tackle the inherent limitations of thin-film light emitting diodes as well as fabrication and application issues of traditional substrates. A dense packing of gallium nitride nanowires were grown on a nickel foam substrate. The nanowires grew predominantly along the a-plane direction, normal to the local surface of the nickel foam. Strong luminescence was observed from undoped GaN and InGaN quantum well light emitting diode nanowires.
References in corpus (4)
- High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates
- Wurtzite III-nitride distributed Bragg reflectors on Si (100) substrates
- Zinc Sulphide Overlayer Two-Dimensional Photonic Crystal for Enhanced Extraction of Light from a Micro Cavity Light-Emitting Diode
- Polarization and Space Charge Limited Current in III-Nitride Heterostructure Nanowires