activity
20092026
most citedTechnique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

217 citations · 496 across the 14 of their papers we have counts for

collaborators

14 papers

cond-mat.mtrl-sci2026

Lock-In Infrared Thermography: Phase Analysis for Rapid, Wide-Range Thermal Conductivity Measurements

Ethan A. Scott, Jeffrey L. Braun, Jessica Reyes +5

We report on a phase-based lock-in thermography approach, combined with a multilayered thermal model (often employed in thermoreflectance analysis), to measure the thermal conducti…

physics.app-ph2021★ 19 cited

Design of Ga2O3 Modulation Doped Field Effect Transistors

Michael Mastro, Marko J. Tadjer, Jihyun Kim +2

The design of beta-Ga2O3-based modulation doped field effect transistors (MODFETs) is discussed with a focus on the role of self-heating and resultant modification of the electron…

cond-mat.mtrl-sci2021★ 11 cited

Assessment of the (010) -GaO Surface and Substrate Specification

Michael A. Mastro, Charles R. Eddy, Marko J. Tadjer +3

Recent breakthroughs in bulk crystal growth of the thermodynamically stable beta phase of gallium oxide (-GaO) have led to the commercialization of large-area beta-Ga$_2…

physics.optics2020★ 16 cited

Multi-frequency coherent emission from superstructure thermal emitters

Guanyu Lu, Marko Tadjer, Joshua D. Caldwell +1

Long-range spatial coherence can be induced in thermal emitters by embedding a periodic grating into a material supporting propagating polaritons or dielectric modes. However, the…

physics.app-ph2020★ 1 cited

III-Nitride Nanowire Based Light Emitting Diodes on Carbon Paper

Michael A. Mastro, Travis J. Anderson, Marko J. Tadjer +4

This article presents the use of flexible carbon substrates for the growth of III-nitride nanowire light emitters. A dense packing of gallium nitride nanowires were grown on a carb…

physics.app-ph2020★ 8 cited

Opportunities and Challenges in MOCVD of β-Ga2O3 for Power Electronic Devices

M. A. Mastro, J. K. Hite, C. R. Eddy +4

Recent breakthroughs in bulk crystal growth of beta-Ga2O3 by the edge-defined film-fed technique has led to the commercialization of large-area beta-Ga2O3 substrates. Standard epit…

physics.app-ph2020

Simultaneous Evaluation of Heat Capacity and In-plane Thermal Conductivity of Nanocrystalline Diamond Thin Films

Luke Yates, Zhe Cheng, Tingyu Bai +6

As wide bandgap electronic devices have continued to advance in both size reduction and power handling capabilities, heat dissipation has become a significant concern. To mitigate…

physics.optics2020★ 51 cited

Vibrational Coupling to Epsilon-Near-Zero Waveguide Modes

Thomas G. Folland, Guanyu Lu, A. Bruncz +3

Epsilon near zero modes offer extreme field enhancement that can be utilized for developing enhanced sensing schemes. However, demonstrations of enhanced spectroscopies have largel…

physics.app-ph2019★ 133 cited

Integration of Atomic Layer Epitaxy Crystalline Ga2O3 on Diamond for Thermal Management

Zhe Cheng, Virginia D. Wheeler, Tingyu Bai +6

Ga2O3 has attracted great attention for electronic device applications due to its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from…

cond-mat.mes-hall2019★ 5 cited

Thermal Conductance across beta-Ga2O3-diamond Van der Waals Heterogeneous Interfaces

Zhe Cheng, Luke Yates, Jingjing Shi +3

Because of its ultrawide bandgap, high breakdown electric field, and large area affordable substrates grown from the melt, beta Ga2O3 has attracted great attention recently for pot…

cond-mat.mes-hall2018★ 2 cited

Tunable Thermal Energy Transport across Diamond Membranes and Diamond-Si Interfaces by Nanoscale Graphoepitaxy

Zhe Cheng, Tingyu Bai, Jingjing Shi +14

The development of electronic devices, especially those that involve heterogeneous integration of materials, has led to increased challenges in addressing their thermal operational…

cond-mat.str-el2016★ 31 cited

Temperature and Electric Field Induced Metal-Insulator Transition in Atomic Layer Deposited Vanadium Dioxide Thin Films

Marko J. Tadjer, Virginia D. Wheeler, Brian P. Downey +4

Amorphous vanadium dioxide (VO) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670 C for 1-2 hours under a low oxygen pre…

cond-mat.mes-hall2014★ 2 cited

Towards pristine graphene-metal interface and microstructures: Laser assisted direct patterning on Epitaxial graphene

A. Nath, M. Currie, V. D. Wheeler +11

Graphene-metal contact resistance is governed by both intrinsic and extrinsic factors. Intrinsically, both the density of states bottleneck near the Dirac point and carrier reflect…

cond-mat.mtrl-sci2009★ 217 cited

Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

Joshua D. Caldwell, Travis J. Anderson, James C. Culbertson +11

In order to make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry transfer of…