Temperature and Electric Field Induced Metal-Insulator Transition in Atomic Layer Deposited Vanadium Dioxide Thin Films

Marko J. Tadjer; Virginia D. Wheeler; Brian P. Downey; Zachary R. Robinson; David J. Meyer; Charles R. Eddy,; Fritz J. Kub

doi:10.1016/j.sse.2017.06.018

paper

Temperature and Electric Field Induced Metal-Insulator Transition in Atomic Layer Deposited Vanadium Dioxide Thin Films

arXiv:1602.06340 · doi:10.1016/j.sse.2017.06.018

Abstract

Amorphous vanadium dioxide (VO $_{2}$ ) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670 $°$ C for 1-2 hours under a low oxygen pressure (10 $^{- 4}$ to 10 $^{- 5}$ Torr). Under these conditions the crystalline VO $_{2}$ phase was maintained, while formation of the V $_{2}$ O $_{5}$ phase was suppressed. Electrical transition from the insulator to the metallic phase was observed in the 37-60 $°$ C range, with a R $_{O N}$ /R $_{O F F}$ ratio of up to about 750 and critical transition temperature of 7-10 $°$ C. Electric field applied across two-terminal device structures induced a reversible phase change, with a room temperature transition field of about 25 kV/cm in the VO $_{2}$ sample processed with the 2 hr long anneal. Both the width and slope of the field induced MIT hysteresis were dependent upon the VO $_{2}$ crystalline quality.

15 pages, 5 figures, 1 table

References in corpus (1)

Voltage-triggered Ultra-fast Metal-insulator Transition in Vanadium Dioxide Switches

Temperature and Electric Field Induced Metal-Insulator Transition in Atomic Layer Deposited Vanadium Dioxide Thin Films

Abstract

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