86 citations · 148 across the 7 of their papers we have counts for
7 papers
Enhanced Permittivity in Wurtzite ScAlN through Nanoscale Sc Clustering
James L Hart, Andrew C Lang, Matthew T Hardy +8
ScN alloyed AlN (ScxAl1-xN, ScAlN) is a wurtzite semiconductor with attractive ferroelectric, dielectric, piezoelectric, and optical properties. Here, we show that ScAlN films (wit…
A comprehensive equivalent circuit model for high overtone bulk acoustic resonators (HBARs)
Vikrant J. Gokhale, Brian P. Downey
This paper presents a new and comprehensive equivalent circuit model for high overtone bulk acoustic resonators (HBARs). HBARs demonstrate several very sharp resonance modes distri…
Strongly dispersive dielectric properties of high-ScN-fraction ScAlN deposited by molecular beam epitaxy
Vikrant J. Gokhale, James G. Champlain, Matthew T. Hardy +9
We present a comprehensive study of dielectric properties including complex permittivity, loss, and leakage of high-ScN-fraction ScAlN thin films grown using molecular beam epitaxy…
Measurements and Numerical Calculations of Thermal Conductivity to Evaluate the Quality of β-Gallium Oxide Thin Films Grown on Sapphire and Silicon Carbide by Molecular Beam Epitaxy
Diego Vaca, Matthew Barry, Luke Yates +8
We report a method to obtain insights into lower thermal conductivity of β-Ga2O3 thin films grown by molecular beam epitaxy (MBE) on c-plane sapphire and 4H-SiC substrates. We comp…
Epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics
Vikrant J. Gokhale, Brian P. Downey, D. Scott Katzer +4
Solid-state quantum acoustodynamic (QAD) systems provide a compact platform for quantum information storage and processing by coupling acoustic phonon sources with superconducting…
Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors
David A. Deen, Ross Miller, Andrei Osinsky +5
A dual-channel AlN/GaN/AlN/GaN high electron mobility transistor (HEMT) architecture is proposed, simulated, and demonstrated that suppresses gate lag due to surface-originated tra…
Temperature and Electric Field Induced Metal-Insulator Transition in Atomic Layer Deposited Vanadium Dioxide Thin Films
Marko J. Tadjer, Virginia D. Wheeler, Brian P. Downey +4
Amorphous vanadium dioxide (VO) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670 C for 1-2 hours under a low oxygen pre…