86 citations · 161 across the 6 of their papers we have counts for
6 papers
Measurements and Numerical Calculations of Thermal Conductivity to Evaluate the Quality of β-Gallium Oxide Thin Films Grown on Sapphire and Silicon Carbide by Molecular Beam Epitaxy
Diego Vaca, Matthew Barry, Luke Yates +8
We report a method to obtain insights into lower thermal conductivity of β-Ga2O3 thin films grown by molecular beam epitaxy (MBE) on c-plane sapphire and 4H-SiC substrates. We comp…
Epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics
Vikrant J. Gokhale, Brian P. Downey, D. Scott Katzer +4
Solid-state quantum acoustodynamic (QAD) systems provide a compact platform for quantum information storage and processing by coupling acoustic phonon sources with superconducting…
Noise Measurements of High-Speed, Light-Emitting GaN Resonant-Tunneling Diodes
E. R. Brown, W-D. Zhang, T. A. Growden +4
We report here the first RF noise measurements on two designs of n-doped GaN/AlN double-barrier resonant tunneling diodes (RTDs), each having a room-temperature negative differenti…
Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors
David A. Deen, Ross Miller, Andrei Osinsky +5
A dual-channel AlN/GaN/AlN/GaN high electron mobility transistor (HEMT) architecture is proposed, simulated, and demonstrated that suppresses gate lag due to surface-originated tra…
Temperature and Electric Field Induced Metal-Insulator Transition in Atomic Layer Deposited Vanadium Dioxide Thin Films
Marko J. Tadjer, Virginia D. Wheeler, Brian P. Downey +4
Amorphous vanadium dioxide (VO) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670 C for 1-2 hours under a low oxygen pre…
Suppression of Surface-Originated Gate-Lag by a Dual-Channel AlN/GaN HEMT Architecture
David A. Deen, David F. Storm, D. Scott Katzer +2
A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-state related gate lag.…