86 citations · 161 across the 6 of their papers we have counts for
Showing 2016Show all
2 papers · 1 filter
cond-mat.mes-hall2016★ 10 cited
Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors
David A. Deen, Ross Miller, Andrei Osinsky +5
A dual-channel AlN/GaN/AlN/GaN high electron mobility transistor (HEMT) architecture is proposed, simulated, and demonstrated that suppresses gate lag due to surface-originated tra…
cond-mat.str-el2016★ 31 cited
Temperature and Electric Field Induced Metal-Insulator Transition in Atomic Layer Deposited Vanadium Dioxide Thin Films
Marko J. Tadjer, Virginia D. Wheeler, Brian P. Downey +4
Amorphous vanadium dioxide (VO) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670 C for 1-2 hours under a low oxygen pre…